AS4C64M8D3-12BIN Allicdata Electronics
Allicdata Part #:

1450-1430-ND

Manufacturer Part#:

AS4C64M8D3-12BIN

Price: $ 2.88
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 78FBGA
More Detail: SDRAM - DDR3 Memory IC 512Mb (64M x 8) Parallel 80...
DataSheet: AS4C64M8D3-12BIN datasheetAS4C64M8D3-12BIN Datasheet/PDF
Quantity: 230
1 +: $ 2.62080
10 +: $ 2.37762
25 +: $ 2.32571
50 +: $ 2.31286
242 +: $ 2.07421
484 +: $ 2.06646
726 +: $ 1.99036
1210 +: $ 1.89232
Stock 230Can Ship Immediately
$ 2.88
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 512Mb (64M x 8)
Clock Frequency: 800MHz
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TA)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (8x10.5)
Description

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Memory: AS4C64M8D3-12BIN application field and working principle

AS4C64M8D3-12BIN is a form of memory technology commonly used in a variety of applications, including embedded systems, general-purpose computing, and digital media. It is a synchronous, low profile, multiple bank dynamic random access memory (SDRAM) device used for applications requiring a small footprint but high-performance storage and retrieval capabilities. It is generally used for applications where size and power consumption matters.

The AS4C64M8D3-12BIN consists of eight 64-bit organization (eight banks) dynamic random access memory die and is available in packages ranging from a 9x9mm 52-Lead TFBGA (0.5mm ball pitch) to a 20x20mm 68-Lead TFBGA (0.5mm ball pitch). The chip also includes an on-chip temperature sensor, temperature sensitive input/output isolation switches and supply voltage monitor circuitry. This design enables the AS4C64M8D3-12BIN to operate at low voltage and power with low signal to noise ratio.

As with all memories, the AS4C64M8D3-12BIN is subject to wear and tear due to environmental factors such as temperature, moisture, and dust. To ensure a long-term reliable operation of the chip, manufacturers must develop a reliable temperature management system for their applications. This includes an understanding of how the chip’s temperature control circuitry functions and how it can be managed to ensure that the memory’s performance remains stable.

AS4C64M8D3-12BIN’s temperature control circuitry consists of a temperature sensor, temperature sensitive input/output isolation switches, and supply voltage monitor circuitry that operates together to bring the chip to the proper operating temperature. The temperature sensor is designed to measure the temperature inside the chip and the temperature-sensitive input/output isolation switches are designed to ensure that only the desired Vcc (supply voltage) settings are enabled for the chip. The supply voltage monitor circuitry then compares the actual voltage applied to the chip against the programmed minimum and maximum values, and scales the voltage accordingly. This ensures that the chip remains within the desired operating temperature.

In summary, AS4C64M8D3-12BIN is an advanced form of memory technology commonly used in a variety of applications requiring a small footprint with low-voltage and low-power consumption. The chip includes an on-chip temperature sensor, temperature-sensitive input/output isolation switches, and supply voltage monitor circuitry which together enable the AS4C64M8D3-12BIN to operate within the desired temperature range.

The specific data is subject to PDF, and the above content is for reference

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