AS4C8M16MSA-6BIN

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C8M16MSA-6BIN is a type of dynamic random access memory (DRAM) chip developed by Samsung and is extensively used in a variety of electronic devices such as computers, digital cameras, and game consoles. It is also commonly used as main memory in modern embedded systems. The area of application for this type of chip is mainly in the field of high-performance electronics and mobile devices.

The AS4C8M16MSA-6BIN utilizes 16M dynamic random access memory (DRAM) cells, and can deliver an access time of 6ns. This allows devices utilizing this chip to operate at high speeds and can effectively handle complex operations.

The chip also features sleep modes which allow it to effectively use power. When the device is idle and not in use, the AS4C8M16MSA-6BIN will go into a low power state which is significantly more energy efficient than when it is active.

The AS4C8M16MSA-6BIN is also capable of burst mode operation. In this mode, the chip will continuously access data from memory, loading it all into its internal registers in one go. This can be extremely useful if the processor needs to access large chunks of data.

The AS4C8M16MSA-6BIN chip can also operate in the synchronous dynamic random access memory (SDRAM) mode. In this mode, the chip will read and write data in sync with a processor’s clock cycles. This allows devices utilizing this chip to operate as if they had a dedicated memory controller, and can increase throughput significantly.

The working principle underlying the AS4C8M16MSA-6BIN chip is based on the principle of capacitive charge storage. In each memory cell, two capacitors are linked to the internal read/write circuitry. When the device is in operation, the charge stored in the capacitors can be used to represent 0s and 1s. The data is stored this way until it is overwritten by new data or the device is powered off.

The AS4C8M16MSA-6BIN is a highly capable memory chip that is guaranteed to elevate the performance of any device it is used in. Its burst mode operation, low power state capabilities, and SDRAM mode make it an excellent choice for a wide range of applications in the field of high-performance electronics and mobile devices.

The specific data is subject to PDF, and the above content is for reference