AS4C8M16S-6TINTR Allicdata Electronics
Allicdata Part #:

AS4C8M16S-6TINTR-ND

Manufacturer Part#:

AS4C8M16S-6TINTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 128M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5n...
DataSheet: AS4C8M16S-6TINTR datasheetAS4C8M16S-6TINTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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Memory:

AS4C8M16S-6TINTR is a type of memory device produced by Adesto Technologies. It is designed to provide reliable, low-power operation in a wide range of applications. This memory device offers excellent performance and scalability, making it ideal for a variety of embedded systems.

The AS4C8M16S-6TINTR features a low-power, high-speed, CMOS asynchronous SRAM. It is designed with a wide operating range and wide variety of operating frequencies including 60MHz and 100MHz, allowing for higher data transfer rates. This device is also equipped with a number of advanced features such as an on-chip CRC and an on-chip ECC to ensure accuracy and reliability.

The AS4C8M16S-6TINTR is suitable for a variety of embedded systems applications. It is commonly used in automotive, industrial and consumer electronics, medical and aerospace applications. Typical applications include data logging, image transfer, data buffering, communication interface and control systems. This device can also be used for temporary data storage or for storing code or variables for general-purpose applications.

The AS4C8M16S-6TINTR is a synchronous device, meaning that its memory access operations are synchronized with respect to a clock signal. The basic operation of this type of memory is to receive data from an external source, write it to the SRAM cells, and then read it back when it is needed. The device is also capable of executing an instruction cycle in order to execute various operations. For example, a Load instruction will load the data from the external source, while a Store instruction will store the data in the SRAM cells.

The AS4C8M16S-6TINTR is designed to provide maximum data throughput and minimal power consumption. It uses advanced design techniques to achieve high density and low power operation. This makes it an ideal choice for applications requiring efficient operation and low cost.

In summary, the AS4C8M16S-6TINTR is a versatile and efficient memory device suitable for a wide variety of embedded systems applications. It features low-power, high-speed CMOS asynchronous SRAM and advanced features such as on-chip CRC and ECC. This device is designed to provide maximum data throughput and minimal power consumption, making it an ideal choice for applications that require efficient operation and low cost.

The specific data is subject to PDF, and the above content is for reference

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