Allicdata Part #: | 1450-1265-ND |
Manufacturer Part#: |
AS4C8M16SA-6TAN |
Price: | $ 2.44 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 128M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5n... |
DataSheet: | AS4C8M16SA-6TAN Datasheet/PDF |
Quantity: | 60 |
1 +: | $ 2.21760 |
10 +: | $ 2.01159 |
25 +: | $ 1.96787 |
50 +: | $ 1.95703 |
108 +: | $ 1.75508 |
324 +: | $ 1.74854 |
540 +: | $ 1.68414 |
1080 +: | $ 1.60119 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 128Mb (8M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
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Memory is the building block of any computing system, and it is critical to the efficient operation of the system. The memory technology is continually evolving, and with that comes new products and applications. The AS4C8M16SA-6TAN is a low-power memory device designed to provide high performance and low-power operation in smaller form factors. This article will discuss the application and working principle of the AS4C8M16SA-6TAN.
Applications of AS4C8M16SA-6TAN
The AS4C8M16SA-6TAN is a type of low-power memory device that utilizes a 1.2V supply voltage. It is a DDR4 SDRAM product and offers a maximum transfer rate of 2133MHz. It can be used as main memory in laptop and netbook computers, as well as embedded systems. In addition, the AS4C8M16SA-6TAN can also be used as a cache memory in servers. It is an ideal product for consumer electronics and communication devices, as it offers low power consumption and enhanced performance.
Working Principle of AS4C8M16SA-6TAN
The AS4C8M16SA-6TAN is a single-ended chip that operates with a single supply voltage of 1.2V. It is designed to provide high performance and low power consumption. It is composed of eight banks of 16Mx16 bits or 32Mx16 bits memory cells. The device utilizes self-timed read and write operations and uses an asynchronous 3-2-1 operation scheme with 4 internal address phases. The device is designed to offer improved performance through its low latency and high bandwidth. The device has an Independent Bank (IBANK) operation scheme, which allows for its independent operation across different processes.
The device’s architecture consists of an array of banks, a array control unit, and an interface to an external data bus. The array control unit accesses the data from the banks and transfers it to the external data bus on request. The device utilizes error detection and correction capabilities, as well as auto-refresh. The AS4C8M16SA-6TAN also has an on-die temperature sensor for monitoring temperatures. This ensures that the device operates within its specified temperature range.
The device has two operating modes: normal and low-power. In normal mode, the device can achieve a maximum throughput of 2133MHz at 1.2V. In low-power mode, the device can operate at a reduced voltage while still providing the same performance. This mode is ideal for applications such as embedded systems and consumer electronics, where power consumption is critical.
Conclusion
In conclusion, the AS4C8M16SA-6TAN is a low-power memory device that offers high performance and low-power operation in smaller form factors. It can be used in laptop, netbook, server, embedded system, and consumer electronics applications. The device has error detection and correction capabilities and an on-die temperature sensor for improved performance. It has two operating modes: normal and low-power, which allows for the reduced power consumption in smaller applications. This makes the device an ideal choice for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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AS4C64M16D3LA-12BCN | Alliance Mem... | 3.4 $ | 83 | IC DRAM 1G PARALLEL 96FBG... |
AS4C8M32S-7TCN | Alliance Mem... | 4.27 $ | 82 | IC DRAM 256M PARALLEL 86T... |
AS4C128M16D3A-12BCN | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BCN | Alliance Mem... | 4.8 $ | 50 | IC DRAM 2G PARALLEL 96FBG... |
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AS4C64M16D2-25BAN | Alliance Mem... | 4.84 $ | 195 | IC DRAM 1G PARALLEL 84FBG... |
AS4C64M16D3-12BAN | Alliance Mem... | 4.91 $ | 162 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M16D3LA-12BIN | Alliance Mem... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
AS4C256M16D3A-12BAN | Alliance Mem... | 9.67 $ | 253 | IC DRAM 4G PARALLEL 96FBG... |
AS4C32M16SB-7TCNTR | Alliance Mem... | 6.51 $ | 1000 | IC DRAM 512M PARALLEL 54T... |
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