AS4C8M32MSA-6BINTR Allicdata Electronics
Allicdata Part #:

AS4C8M32MSA-6BINTR-ND

Manufacturer Part#:

AS4C8M32MSA-6BINTR

Price: $ 3.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 90FBGA
More Detail: SDRAM - Mobile Memory IC 256Mb (8M x 32) Parallel ...
DataSheet: AS4C8M32MSA-6BINTR datasheetAS4C8M32MSA-6BINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.76837
Stock 1000Can Ship Immediately
$ 3.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (8M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 5.5ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-FBGA (8x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory: AS4C8M32MSA-6BINTR

AS4C8M32MSA-6BINTRis a 32Mb synchronous DRAM (SDRAM) component manufactured by Alliance Semiconductor Corporation, a leading semiconductor design and manufacturing company. The component is embedded with an array of 8 banks of 4Mb each, yielding an impressive processing power of up to 16MHz. This extremely small scenario makes it a great choice for high-performance applications such as set-top boxes, digital video recorders, gaming consoles, and computers.

Application Field

The AS4C8M32MSA-6BINTR component is an ideal choice for high-performance, low-power applications. It offers high reliability due to its Fast Page Mode (FPM) access, which enables faster read and write operations. This component is well-suited for graphics-intensive applications, due to its 4Mb array design. The component also features a 3.3V core that is fully compliant to the JEDEC DDR2 standard, and is designed to be compatible with most existing socketed DDR2 memory modules.

Working Principle

The AS4C8M32MSA-6BINTR component utilizes an array of 8 banks of 4Mb each, yielding impressive processing power of up to 16MHz. This component provides high-speed, low-power memory operation with a fast page mode (FPM) access times to ensure the quick retrieval and storage of data. The component also utilizes a 3.3V core that is compliant to the JEDEC DDR2 standard to ensure compatibility with most existing socketed DDR2 memory modules. The component also has a built-in self-refresh option and temperature-compensated refresh to ensure reliable operation in all operating conditions.

In addition, the component features two power-saving modes; active and standby. The active mode ensures a low standby power draw, while the standby mode drastically reduces the overall power consumption by cutting off the power from the component. This enables the component to consume less energy while providing a high level of performance.

The AS4C8M32MSA-6BINTR component is designed to meet the industry’s most demanding application and power requirements. Its fast page mode (FPM) access and low-power consumption make it an ideal choice for high-performance, low-power applications.

The specific data is subject to PDF, and the above content is for reference

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