AT45DB041D-MU-SL383

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AT45DB041D-MU-SL383 is a type of non-volatile Flash memory, which is composed of a memory array and a controller. Its applications mostly come from the needs to store large amounts of data in a small form and require high durability, longer battery life and high performance.

The AT45DB041D-MU-SL383 consists of a memory array that is composed of 4,096pages. Each page stores up to 528bytes. The controller, which is integrated into the memory, services as an interface to the user for accessing the array, providing the control signals and reading/writing data to and from memory array.

The AT45DB041D-MU-SL383 features three hardware selection pins—CS, R/B, and WP. CS is the Chip Select line and is an active low. R/B is also an active low and indicates the ready/busy status by outputting an active low signal when it has a valid command sent by the user and follows the command execution until it completes. WP is an active high and puts the device into write-protected mode so the data stored in the Flash memory cannot be written or erased.

Besides, the AT45DB041D-MU-SL383 also features different operating modes depending on the user requirements. The Continuous Array Read mode is one of the most popular modes since it delivers the fastest data read performance of the AT45DB041D-MU-SL383. This mode is suitable for applications that require quick read access to large amounts of data such as graphic display, file transfer and download, etc. The page Read, page Program, and page Erase modes are mainly used to read and write data stored in the memory array at the page level. Serial Peripheral Interface (SPI), Universal Serial Bus (USB) and Dual-SPI are three communication protocols that are supported by the AT45DB041D-MU-SL383.

To sum up, AT45DB041D-MU-SL383 is an ideal choice for many applications that need large amounts of data storage and requires high performance and data security. Its controller manages all commands and communication protocols, ensuring read and write commands are executed in corresponding operations while protecting the contents stored in the memory array from inadvertent destruction or alterations.

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