AT45DB081E-SHNHA-T Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AT45DB081E-SHNHA-T is a memory device from Atmel Corporation. It is a 8 gigabyte EEPROM chip, with a wide range of application fields due to its remarkable features. This article will focus on discussing the AT45DB081E-SHNHA-T’s application fields and working principle.

Application Field

The AT45DB081E-SHNHA-T is a highly versatile and advanced memory device that has a wide range of application fields. It is an ideal choice for data storage due to its large capacity and high reliability. Additionally, it is an ideal choice for embedded applications as it is able to operate with low power consumption. It is also suitable for audio, image and video data storage due to its fast read/write speed and high data integrity. Furthermore, it has excellent radiation tolerance and is able to withstand harsh environmental conditions, making it an ideal choice for aerospace or military applications.

The AT45DB081E-SHNHA-T is also suitable for automotive, medical and industrial automation applications due to its high reliability and long life expectancy. It is also widely used in consumer products, such as digital cameras and music players, due to its fast read/write speeds and high storage capacity.

Working Principle

The AT45DB081E-SHNHA-T is an EEPROM chip, which stands for Electrically Erasable Programmable Read-Only Memory. This type of memory is non-volatile, meaning that the stored data is maintained even when power is removed. This makes it an ideal choice for data storage.

The AT45DB081E-SHNHA-T operates by using a charge trap technology. This technology works by trapping electrons in a floating gate transistor. By applying an electrical charge, the electrons in the transistor are shifted, resulting in a change of state. This change of state is what stores the data in the memory device.

The AT45DB081E-SHNHA-T also uses a Single Level Cell (SLC) architecture that allows for a faster read/write access for data. This means that the data can be accessed at many times faster than an MLC (multi-level cell) architecture. The chip also uses a paged organization, which allows for a more efficient use of memory as it eliminates the need for sectors.

The AT45DB081E-SHNHA-T also includes several features that are beneficial for data storage. These features include a dynamic wear leveling, which helps to extend the life of the device, and an built-in error correction code (ECC), which helps to ensure data integrity. Additionally, the chip includes a patented Flash Lock Region, which allows for data to be securely locked, making it ideal for secure applications.

The AT45DB081E-SHNHA-T also includes several features that make it portable and convenient for use. These features include low power consumption and a small form factor, which allow for portability and easy integration into any system. Additionally, the device is built to be robust and reliable, with a high tolerance for harsh environmental conditions.

Conclusion

In conclusion, the AT45DB081E-SHNHA-T is a powerful, reliable and versatile memory device that has a wide range of application fields. It is an ideal choice for data storage and for applications that require a high degree of reliability. Additionally, it is well suited for embedded, automotive, medical and industrial applications. Furthermore, its low power consumption, fast read/write speeds, and high reliability make it an excellent choice for consumer products. The AT45DB081E-SHNHA-T also has several features that allow it to be portable and convenient, while also being robust and reliable in harsh environmental conditions. Finally, its charge trap technology and SLC architecture allow for fast, efficient and reliable data storage.

The specific data is subject to PDF, and the above content is for reference