AT45DB041E-SSHNHT-B

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The AT45DB041E-SSHNHT-B is an advanced memory device that is often used in applications requiring high endurance and reliability. It is also a non-volatile memory device that has a wide range of applications. This article will explore the application field and working principle of the AT45DB041E-SSHNHT-B.

What is AT45DB041E-SSHNHT-B

The AT45DB041E-SSHNHT-B is a 4Mbit, serial interface Non Volatile Memory (NVM) device, which offers superior performance and endurance. It is based on silicon-oxide-nitride-oxide-silicon (SONOS) technology, and its design offers a high level of endurance and reliability. It is a Serial Peripheral Interface (SPI) device and its interface consists of four signals: Chip Select (CS), Serial Clock (SCK), Serial Data Input (DI) and Serial Data Output (DO).

The AT45DB041E-SSHNHT-B has a memory array of 512 pages, each of which is 512 bytes. It utilizes an internal 16-level buffered Write-Intercept (WPI) architecture for efficient write operations. Additionally, it has a low-power Standby mode which reduces the consumption of power when the device is not being used for read or write operations.

Application Field

The AT45DB041E-SSHNHT-B is often used in mission-critical applications that require both high performance and endurance. It is ideal for applications such as factory automation, automotive telematics, point-of-sale (POS) systems, home security systems, digital signage, medical devices, military avionics and more. Additionally, its wide operating range, low-power consumption and long-term reliability make it the ideal choice for a wide range of applications.

Working Principle

The AT45DB041E-SSHNHT-B utilizes a half-duplex, serial interface protocol that supports both a page read and page write operations. During a page write operation, the data is first written to the page buffer, followed by a write operation which writes the data to the main array. During a page read operation, the data is read from the main array and then sent to the page buffer.

The AT45DB041E-SSHNHT-B makes use of Error Correction Code (ECC) and has a built-in Data Retention mechanism that helps to ensure that data is retained even when power is removed from the device. Additionally, the device has several powerful features such as I2C and on-chip security to protect the data stored in it.

Conclusion

The AT45DB041E-SSHNHT-B is a high performance and reliable memory device that is ideal for many mission-critical applications. Its features such as low power consumption, long-term reliability, and a wide range of operating capabilities make it an ideal choice for a variety of applications. The device utilizes an SPI interface protocol that supports both page read and page write operations, and it also has an internal 16-level buffered Write-Intercept (WPI) architecture for efficient write operations. Additionally, it employs Error Correction Code (ECC) and a built-in Data Retention mechanism which ensure that data is retained even without power.

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