BAP50-03,135 Allicdata Electronics
Allicdata Part #:

BAP50-03,135-ND

Manufacturer Part#:

BAP50-03,135

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE PIN 50V 0.05A 0.5W SOD323
More Detail: RF Diode PIN - Single 50V 50mA 500mW SOD-323
DataSheet: BAP50-03,135 datasheetBAP50-03,135 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02887
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 50mA
Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 500mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: BAP50
Description

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Diodes-RF can refer to diodes that are used for radio-frequency applications, allowing them to transmit and receive radio signals. One example of this type of diode is the BAP50-03,135. This article will discuss the application field and working principle of the BAP50-03,135.

The BAP50-03,135 is a small signal, low capacitance surface mount diode. It has very low forward voltage, making it well suited for RF amplification and RF signal rectification applications. The diode has a maximum forward voltage of 0.3 Volts and a typical capacitance of 3 pF, making it ideal for low-noise applications. Additionally, the BAP50-03,135 is able to withstand a reverse voltage of up to 150 Volts, and can be used in a wide range of temperatures (-65 to +150°C).

Due to its low forward voltage and high reverse voltage, the BAP50-03,135 is suitable for a wide range of RF applications. One example is in the amplification of low-power radio signals, where the diode can be used as a switch that turns the radio signal on and off. It can also be used to amplify RF signals by rectifying them and providing a DC bias. Additionally, the diode can be used in RF signal detection and rectification by converting the radio signal from AC to DC.

The working principle of the BAP50-03,135 involves the use of two electrodes; a cathode and an anode. When a voltage is applied to the diode, the electrons in the cathode are attracted to the anode, allowing current to flow and creating a flow of electrons or a current. When the voltage is too high, the reverse voltage breakdown occurs, preventing the diode from becoming damaged.

The BAP50-03,135 is a versatile diode commonly used in RF applications. It has low forward voltage, high reverse voltage, and a low capacitance, making it ideal for use in amplifying, rectifying, and detecting low-power radio signals. Additionally, it can withstand a wide range of temperatures and is capable of withstanding a reverse voltage of up to 150 Volts. This makes the BAP50-03,135 a great choice for use in a wide range of RF applications.

The specific data is subject to PDF, and the above content is for reference

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