Allicdata Part #: | BAP50-03,135-ND |
Manufacturer Part#: |
BAP50-03,135 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN 50V 0.05A 0.5W SOD323 |
More Detail: | RF Diode PIN - Single 50V 50mA 500mW SOD-323 |
DataSheet: | BAP50-03,135 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02887 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.35pF @ 5V, 1MHz |
Resistance @ If, F: | 5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 500mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | BAP50 |
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Diodes-RF can refer to diodes that are used for radio-frequency applications, allowing them to transmit and receive radio signals. One example of this type of diode is the BAP50-03,135. This article will discuss the application field and working principle of the BAP50-03,135.
The BAP50-03,135 is a small signal, low capacitance surface mount diode. It has very low forward voltage, making it well suited for RF amplification and RF signal rectification applications. The diode has a maximum forward voltage of 0.3 Volts and a typical capacitance of 3 pF, making it ideal for low-noise applications. Additionally, the BAP50-03,135 is able to withstand a reverse voltage of up to 150 Volts, and can be used in a wide range of temperatures (-65 to +150°C).
Due to its low forward voltage and high reverse voltage, the BAP50-03,135 is suitable for a wide range of RF applications. One example is in the amplification of low-power radio signals, where the diode can be used as a switch that turns the radio signal on and off. It can also be used to amplify RF signals by rectifying them and providing a DC bias. Additionally, the diode can be used in RF signal detection and rectification by converting the radio signal from AC to DC.
The working principle of the BAP50-03,135 involves the use of two electrodes; a cathode and an anode. When a voltage is applied to the diode, the electrons in the cathode are attracted to the anode, allowing current to flow and creating a flow of electrons or a current. When the voltage is too high, the reverse voltage breakdown occurs, preventing the diode from becoming damaged.
The BAP50-03,135 is a versatile diode commonly used in RF applications. It has low forward voltage, high reverse voltage, and a low capacitance, making it ideal for use in amplifying, rectifying, and detecting low-power radio signals. Additionally, it can withstand a wide range of temperatures and is capable of withstanding a reverse voltage of up to 150 Volts. This makes the BAP50-03,135 a great choice for use in a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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