BAP50-04,215 Allicdata Electronics
Allicdata Part #:

568-1917-2-ND

Manufacturer Part#:

BAP50-04,215

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE PIN GP 50V 50MA SOT-23
More Detail: RF Diode PIN - 1 Pair Series Connection 50V 50mA 2...
DataSheet: BAP50-04,215 datasheetBAP50-04,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06589
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max): 50V
Current - Max: 50mA
Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BAP50-04
Description

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Diodes are basic electronic components utilized in a vast array of electronic applications. RF diodes, such as the BAP50-04, 215, are one of the most widely used types of diode. The BAP50-04, 215 is designed for frequency-dependent applications such as microwave components, oscillators, amplifiers and other applications.

The BAP50-04, 215 is designed as a planar, double-diffused junction-style diode. This type of diode utilizes a junction between two semiconductor layers, which creates a barrier layer. This layer allows for controlled electrical current flow, while also providing high-frequency switching capabilities. The BAP50-04, 215 has an especially low leakage current and provides stable operations even at very high frequencies.

The RF diodes used in the BAP50-04, 215 application field and working principle are typically made of gallium arsenide (GaAs) material which provides a low-resistance, high-speed switching environment. The BAP50-04, 215 has a very low total capacitance and a three-terminal configuration with two terminals in the anode and one in the cathode. This arrangement helps to improve performance by reducing parasitic losses and improving thermal performance.

The working principle behind the BAP50-04, 215 is based on the phenomenon of capacitance. Capacitance occurs between the terminals when a potential difference of a certain amount is applied and when the terminals are connected. This will result in a change in the potential difference of the same amount. The applied voltage then creates an electric field between the terminals which creates a current between them.

The current flowing between the two terminals creates an inductor which produces a magnetic field. This magnetic field is related to the frequency of the applied voltage, which, in turn, creates an alternating current in the circuit. This alternating current then creates energy which is used to move electrons through the device.

The BAP50-04, 215 applications field can be seen in various forms, ranging from communication navigation systems, computer peripherals, and radio receivers. It is also used in radio transmitters and other forms of communication. Moreover, its use can also be seen in various medical applications, such as MRI scanners, automatic blood pressure monitors, and other delicate medical tools. Furthermore, it is also used in many electrical and electronic products such as washing machines, robotic systems, and automotive sensors.

In conclusion, the BAP50-04, 215 is a high-frequency diode designed for use in a variety of electronic components and applications. Its working principle is based on the phenomenon of capacitance and its three-terminal configuration improves performance. The BAP50-04, 215 is widely used in communication, navigation, medical, and electrical/electronic applications.

The specific data is subject to PDF, and the above content is for reference

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