BAP50-04W,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1918-2-ND |
Manufacturer Part#: |
BAP50-04W,115 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN GP 50V 50MA SOT323 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 50mA 2... |
DataSheet: | BAP50-04W,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05670 |
6000 +: | $ 0.05355 |
15000 +: | $ 0.04883 |
30000 +: | $ 0.04568 |
75000 +: | $ 0.04190 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.5pF @ 5V, 1MHz |
Resistance @ If, F: | 5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 240mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BAP50-04 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BAP50-04W,115 diode is a RF diode device used in a variety of applications, such as RF signal switching, signal modulation, signal transmission, and signal reception. It represents the best in technology currently available and is used by the most demanding customers.
The BAP50-04W,115 is a silicon epitaxial planar RF diode specifically designed for high-frequency signal switching applications. It is constructed in an SOT-323 surface mount package with a gold plating on the top and bottom side. The device uses a back-to-back diode configuration and can function as a single-junction diode, a dual junction diode, or a diode-capacitor combination.
Application Field: The BAP50-04W,115 is designed for high-frequency signal switching applications, such as wideband amplifiers, modulators, switches, frequency converters, data transmission circuits, and other related applications. The device is also suitable for RF signal modulation, signal transmission, and signal reception.
Working Principle: The working principle of the BAP50-04W,115 is based on the effects of electrical energy on a semiconductor material. When a voltage is applied, electrons are attracted towards the positively charged area and create a proportionate current. If a reverse voltage is applied, the electrons that have previously moved away from the positively charged area will return the current to its original state. This behavior is called a rectifier, and it is the basis for the operation of this device. When the device is used in a high-frequency switching application, it can act as either a single-junction diode, a dual junction diode, or a diode-capacitor combination.
The device\'s single-junction configuration allows it to operate as an on/off switch, while its dual junction configuration allows it to switch rapidly between two different voltage levels. The device\'s diode-capacitor combination allows it to be used as a high frequency LC or RC filter. This combination allows the device to block out unwanted frequency signals while passing through the desired signals.
The BAP50-04W,115 is a reliable and versatile device capable of providing reliable operation in high frequency switching applications. Its wide range of applications make it suitable for a variety of applications and its ability to quickly switch between various voltage levels makes it an ideal choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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