BAP55LX,315 Allicdata Electronics

BAP55LX,315 Discrete Semiconductor Products

Allicdata Part #:

568-8536-2-ND

Manufacturer Part#:

BAP55LX,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: DIODE SILICON PIN SOD-882D
More Detail: RF Diode PIN - Single 50V 100mA 135mW 2-DFN1006D (...
DataSheet: BAP55LX,315 datasheetBAP55LX,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05801
30000 +: $ 0.05321
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 100mA
Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
Resistance @ If, F: 800 mOhm @ 100mA, 100MHz
Power Dissipation (Max): 135mW
Operating Temperature: -65°C ~ 150°C (TJ)
Package / Case: 2-XDFN
Supplier Device Package: 2-DFN1006D (0.6x1.0)
Base Part Number: BAP55
Description

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The BAP55LX, 315 is a type of diode for the RF (Radio Frequency) system that is used in a wide range of applications and has some unique features and benefits to provide the user. Let’s look at the application field and working principle of this part.

The most common use of the device is as a modulator, detector or as a frequency doubler in RF systems. It is commonly used in high power switching, rectification and mixing applications, providing excellent noise suppression and harmonic rejection. The device is also suitable for use in broadband RF receivers.

The primary application field of the BAP55LX, 315 is in the field of RADAR (Radio Detection and Ranging). The device has a very fast switching speed that allows it to be used in pulse compression receivers, for High Range Resolution. It is also used in other applications such as Seismic surveying, Cardiac imaging and medical diagnostics, Industrial process control, Vehicle tracking and navigation and Collision avoidance systems.

The working principle of the device is based on the fact that the current flowing through it is dependent on the input voltage applied to the device. As the input voltage increases, the current through the device increases exponentially while the voltage across the diode remains relatively constant. This makes it ideal for applications where high power switching is required, such as in RADAR systems.

The BAP55LX, 315 is also used in receivers and amplifiers, where the device is used to reduce the noise produced by the RF signal. This is achieved by using the device to reduce the harmonic distortion and reduce the excess noise produced by the RF signal. The device also provides excellent gain stability, with negligible variation over temperature and time.

The BAP55LX, 315 is a unique type of diode for the RF system with numerous benefits and features. It can be used in a wide range of applications and provides excellent gain stability and noise suppression. The device is the ideal choice for applications requiring high speed switching and economical solutions.

The specific data is subject to PDF, and the above content is for reference

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