BAP55LX,315 Discrete Semiconductor Products |
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Allicdata Part #: | 568-8536-2-ND |
Manufacturer Part#: |
BAP55LX,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE SILICON PIN SOD-882D |
More Detail: | RF Diode PIN - Single 50V 100mA 135mW 2-DFN1006D (... |
DataSheet: | BAP55LX,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05801 |
30000 +: | $ 0.05321 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.28pF @ 20V, 1MHz |
Resistance @ If, F: | 800 mOhm @ 100mA, 100MHz |
Power Dissipation (Max): | 135mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | 2-XDFN |
Supplier Device Package: | 2-DFN1006D (0.6x1.0) |
Base Part Number: | BAP55 |
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The BAP55LX, 315 is a type of diode for the RF (Radio Frequency) system that is used in a wide range of applications and has some unique features and benefits to provide the user. Let’s look at the application field and working principle of this part.
The most common use of the device is as a modulator, detector or as a frequency doubler in RF systems. It is commonly used in high power switching, rectification and mixing applications, providing excellent noise suppression and harmonic rejection. The device is also suitable for use in broadband RF receivers.
The primary application field of the BAP55LX, 315 is in the field of RADAR (Radio Detection and Ranging). The device has a very fast switching speed that allows it to be used in pulse compression receivers, for High Range Resolution. It is also used in other applications such as Seismic surveying, Cardiac imaging and medical diagnostics, Industrial process control, Vehicle tracking and navigation and Collision avoidance systems.
The working principle of the device is based on the fact that the current flowing through it is dependent on the input voltage applied to the device. As the input voltage increases, the current through the device increases exponentially while the voltage across the diode remains relatively constant. This makes it ideal for applications where high power switching is required, such as in RADAR systems.
The BAP55LX, 315 is also used in receivers and amplifiers, where the device is used to reduce the noise produced by the RF signal. This is achieved by using the device to reduce the harmonic distortion and reduce the excess noise produced by the RF signal. The device also provides excellent gain stability, with negligible variation over temperature and time.
The BAP55LX, 315 is a unique type of diode for the RF system with numerous benefits and features. It can be used in a wide range of applications and provides excellent gain stability and noise suppression. The device is the ideal choice for applications requiring high speed switching and economical solutions.
The specific data is subject to PDF, and the above content is for reference
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