Allicdata Part #: | BAP51-04W,115-ND |
Manufacturer Part#: |
BAP51-04W,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN GP 50V 50MA SOT323 |
More Detail: | RF Diode PIN - 1 Pair Series Connection 50V 50mA 2... |
DataSheet: | BAP51-04W,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04334 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.35pF @ 5V, 1MHz |
Resistance @ If, F: | 2.5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 240mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BAP51-04 |
Description
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The BAP51-04W,115 power diode is one of the most popular RF diodes in the market today, and it has a vast range of applications. From RF amplifiers to mixers, this diode can be used in many electrical and electronic projects. The main component of this diode is the P-n junction, which is formed by two types of semiconducting material, and it is responsible for the control of electrical current. In order to function efficiently, the diode is connected to a circuit by two ‘leads’, which are the anode and cathode.The key principle behind the working of this diode is known as the P-n junction effect, which is an effect that occurs when two semiconducting materials are brought in close proximity. When a voltage is applied across the junction, the electric field that is created causes electrons and holes (positive charge carriers) to move around within the junction. This creates a barrier that prevents electric current from flowing in both directions and only allows it to flow in one direction, which is dependent on the applied voltage. This is called rectification and this is the main function of the diode.This diode can also be used for modulation purposes. When the voltage across the junction is controlled (either through an external circuit or by adjusting the applied voltage) the resistance of the junction also changes, which can be used to modulate signals. The resistance of the diode varies according to temperature, so it can also be used for temperature control.In terms of usage, this diode is mostly used in RF amplifiers and mixers. This diode can be used for amplification purposes, and it can be used to generate high frequency signals with tiny energy losses. When used in a mixer, it can combine two signals to produce a mixed output. This output is usually used to create a radio frequency power amplifier, which is used to enhance the signals and make them louder.In conclusion, the BAP51-04W,115 diode is one of the most versatile RF diodes available today, and it can be used in many different applications. It uses the P-n junction effect to control electrical current and is capable of modulation, amplification and temperature control. This diode is particularly useful for amplifying and mixing signals in electrical and electronic projects.The specific data is subject to PDF, and the above content is for reference
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