Allicdata Part #: | 568-1920-2-ND |
Manufacturer Part#: |
BAP50-05W,115 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | DIODE PIN GP 50V 50MA SOT323 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 50V 50mA 240m... |
DataSheet: | BAP50-05W,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05670 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 50mA |
Capacitance @ Vr, F: | 0.5pF @ 5V, 1MHz |
Resistance @ If, F: | 5 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 240mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BAP50-05 |
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Diodes play a critical role in various electronic circuits, and they are especially useful in the field of RF (radio frequency) technology. RF diodes, such as the BAP50-05W,115, are designed to operate in high-frequency applications. While the working principle for RF diodes is the same as for any other diode, the components within it are specialized to better handle the higher frequencies.
Tunnel Diode
The BAP50-05W,115 is a tunnel diode, which is a type of high-frequency diode. This type of diode is unique in that it has a very small electric current in its forward (on) state and a very large current in its reverse (off) state. These diodes are used in applications where very rapid switching is required, with minimal power consumption.
Applications
The BAP50-05W,115 is most commonly used in microwave systems, from 100 GHz to 500 GHz. These diodes are also used in a variety of other applications, including telecom, wireless communication, and medical imaging.
Working Principle
The working principle for RF diodes is similar to that for any other diode. Diodes are designed to allow electric current to flow in one direction, while blocking electric current in the other. This is done by using junction rectifiers and N-type and P-type semiconductor materials.
The BAP50-05W,115 is a tunnel diode, which means that it is unique in that it has a very small electric current in its forward (on) state and a very large current in its reverse (off) state. This allows the diode to switch quickly, while consuming very little power. This makes it ideal for use in high-frequency applications, like those in the microwave range.
Conclusion
The BAP50-05W,115 is a tunnel diode that is designed for high-frequency applications. It is most commonly used in microwave systems, from 100 GHz to 500 GHz, and is also used in other applications, such as telecom, wireless communication, and medical imaging. The working principle for RF diodes is similar to that for any other diode, however tunnel diodes are unique in that they have a very small current in their forward (on) state and a very large current in their reverse (off) state, allowing for rapid switching with minimal power consumption.
The specific data is subject to PDF, and the above content is for reference
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