Allicdata Part #: | BAR63-03WE6433-ND |
Manufacturer Part#: |
BAR 63-03W E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF SGL 50V 100MA SOD-323 |
More Detail: | RF Diode PIN - Single 50V 100mA 250mW PG-SOD323-2 |
DataSheet: | BAR 63-03W E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 50V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 1 Ohm @ 10mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | PG-SOD323-2 |
Base Part Number: | BAR63 |
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BAR 63-03W E6433 is a high speed RF diode chip in small package. It has excellent RF performance and wide application filed. In addition, This device is widely used as switching/protection diodes, Oscillator diodes, Mixer diodes, Modulator/Demodulator diodes, and amplifier diode in between the small power range of 1000 MHz and 3500 MHz.
The working principle of BAR 63-03W E6433 is based on Schottky diode composed of two layers, a barrier layer and a metal-oxide layer. When the voltage is applied to the anode, the metal-oxide layer is charged to form a diode. When the diode is reverse-biased, the metal-oxide layer acts like a resistor and the barrier layer acts like a capacitor. The two layers are separated by a thin insulator.
BAR 63-03W E6433 works in high frequency switching and DC-blocking, usually in an oscillator circuit. This device can also be used as a DC rectifier, a short-circuit protector, and an RF amplifier. In addition, it has many applications in wireless communication systems, such as wireless base stations and wireless modems.
These diodes offer several advantages. They have high forward and reverse current handling capability, low parasitic capacitance, low junction capacitance, low-power losses, low input/output capacitance, and wide frequency range. In addition, they have excellent RF performance and are highly reliable.
BAR 63-03W E6433 is a versatile device and it can be used in a wide range of applications in the telecom and wireless industry. The diode is capable of handling high power levels, making it suitable for a wide range of applications. In addition, the device can be used in high-frequency switching, DC blocking, oscillator, amplifier and rectifier circuits.
In conclusion, BAR 63-03W E6433 is a high-speed RF diode chip with a wide variety of applications in the telecom and wireless industry. It has excellent RF performance along with low power losses, low junction capacitance, low input/output capacitance, and wide frequency range. This device is widely used in switching/protection diodes, Oscillator diodes, Mixer diodes, Modulator/Demodulator diodes, and amplifier diodes.
The specific data is subject to PDF, and the above content is for reference
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