Allicdata Part #: | BAR64-05WH6433-ND |
Manufacturer Part#: |
BAR 64-05W H6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE RF PIN 150V 100MA SOT323 |
More Detail: | RF Diode PIN - 1 Pair Common Cathode 150V 100mA 25... |
DataSheet: | BAR 64-05W H6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | PIN - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | 150V |
Current - Max: | 100mA |
Capacitance @ Vr, F: | 0.35pF @ 20V, 1MHz |
Resistance @ If, F: | 1.35 Ohm @ 100mA, 100MHz |
Power Dissipation (Max): | 250mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BAR64-05 |
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Diodes are components that allow electric current to pass through them in one direction only and block it in the opposite direction. These components come in a variety of shapes and sizes and can be found in many types of technical applications. BAR 64-05W H6433 is one of the most widely used diodes in the radio frequency (RF) domain. This article gives an overview of the application field and working principle of this part.
Application Field
The BAR 64-05W H6433 diode is a high power diode that is commonly used in radio frequency (RF) applications. This diode is used in many different applications and is popular with radio engineers and technicians for its low noise characteristics, durability and high-power efficiency. It is used for both pulsed and CW applications in the 1~50MHz frequency band and is suitable for input, output and driver stages of transistors and amplifiers. This diode is also widely used in broadcast transmitters, high-power amplifiers, and radiation and variable measurement instruments.
Working Principle
The BAR 64-05W H6433 diode has a dual polarity construction, which is the key to its high power operation. The diode is made up of two external electrodes, gate and anode, located in an enclosed ceramic body. When voltage is applied to the gate, the anode allows current to pass through the diode from gate to anode, resulting in a forward bias. When the voltage is reversed, the anode will block current from passing through the diode and resulting in a reverse bias.
The current conducting properties of the diode can be further improved by connecting it with a resistor in series with the diode. This resistor is used to control the current passing through the diode and can reduce the electrical noise generated by the diode when operating in RF applications. The total series resistance of the diode must be kept within a specific range in order to avoid power losses, which can add up and cause heating in the diode.
The BAR 64-05W H6433 diode is constructed with high quality materials which make it heat-tolerant and long-lasting. This diode is also equipped with an additional mounting flange in order to provide additional stability when using it in radio frequency (RF) applications.
Conclusion
The BAR 64-05W H6433 diode is one of the most popular diodes available in the radio frequency (RF) domain. Its high power operation is due to its dual polarity construction and its ability to be connected with a series resistor to further improve its performance. Its high quality construction makes it heat-tolerant and long-lasting, and its additional mounting flange provides additional stability when using it in RF applications. This diode is used for both pulsed and CW applications in the 1~50MHz frequency band and is suitable for input, output and driver stages of transistors and amplifiers.
The specific data is subject to PDF, and the above content is for reference
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