Allicdata Part #: | BAV20WS-E3-08GITR-ND |
Manufacturer Part#: |
BAV20WS-E3-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 150V 250MA SOD323 |
More Detail: | Diode Standard 150V 250mA (DC) Surface Mount SOD-3... |
DataSheet: | BAV20WS-E3-08 Datasheet/PDF |
Quantity: | 12000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 200mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 100nA @ 150V |
Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Operating Temperature - Junction: | 150°C (Max) |
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BAV20WS-E3-08 Application Field and Working Principle
The BAV20WS-E3-08 is a single-phase, surface mount, Schottky power rectifier from Vishay Semiconductor. This device is categorized as a part of the Diodes – Rectifiers – Single family. The BAV20WS-E3-08 features very low forward voltage (VF) at a moderate current flow and delivers performance suitable for a wide range of applications including but not limited to consumer electronics, communication systems, automotive systems and renewable energy solutions.
When the BAV20WS-E3-08 is forward-biased, the barrier at the junction of the n-type semiconductor and the p-type semiconductor is depleted allowing charge carriers to flow, thus forming a closed circuit. The current that flows through a rectifier is called the forward current, while the current that is not allowed to flow through it is known as the reverse current. When the rectifier is reverse biased, very little current will flow as there is a greater barrier for the electrons, increasing resistance. In this case, very little current will be allowed to pass through the diode.
The forward conduction characteristics of the BAV20WS-E3-08 contributes to its low power loss and high efficiency. THe low forward voltage (VF) of the BAV20WS-E3-08 helps optimize the overall performance of the system. In addition, the high reverse resistance of the BAV20WS-E3-08 helps reduce the amount of reverse current that is allowed to pass through when it is reverse biased.
The BAV20WS-E3-08 is also highly reliable, and therefore suitable for use in high temperature and high voltage applications, where failure of the component would be costly. It is also capable of handling large current flows, making it suitable for a wide range of applications. The BAV20WS-E3-08 is also highly efficient and eliminates the need for a heatsink, increasing thermal performance.
The BAV20WS-E3-08 is suitable for use in a wide range of applications due to its excellent performance characteristics. It can be used in consumer electronics such as TVs, monitors, mobile phones and household appliances, as well as communication systems, automotive systems and renewable energy solutions.
In conclusion, the BAV20WS-E3-08 is an effective and reliable Schottky power rectifier from Vishay Semiconductor. It features excellent electrical properties and is suitable for a wide range of applications due to its low forward voltage, low power loss and high efficiency. This makes it a great choice for any application where failure of the component would be costly.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BAV21 | ON Semicondu... | -- | 11756 | DIODE GEN PURP 250V 200MA... |
BAV20W-E3-08 | Vishay Semic... | 0.04 $ | 12000 | DIODE GEN PURP 150V 250MA... |
BAV20WS-E3-08 | Vishay Semic... | -- | 12000 | DIODE GEN PURP 150V 250MA... |
BAV21WS-E3-08 | Vishay Semic... | -- | 3000 | DIODE GEN PURP 200V 250MA... |
BAV21W-HE3-08 | Vishay Semic... | 0.04 $ | 12000 | DIODE GEN PURP 200V 250MA... |
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BAV23S | ON Semicondu... | -- | 1000 | DIODE ARRAY GP 250V 200MA... |
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BAV23C-E3-08 | Vishay Semic... | -- | 15000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-08 | Vishay Semic... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV21,113 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21,143 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV20WS-TP | Micro Commer... | -- | 75000 | DIODE GEN PURP 150V 200MA... |
BAV20-TAP | Vishay Semic... | -- | 40000 | DIODE GEN PURP 150V 250MA... |
BAV20-TR | Vishay Semic... | 0.01 $ | 10000 | DIODE GEN PURP 150V 250MA... |
BAV20,113 | Nexperia USA... | 0.02 $ | 30000 | DIODE GEN PURP 150V 250MA... |
BAV20,133 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV20,143 | Nexperia USA... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV202-GS08 | Vishay Semic... | -- | 5000 | DIODE GEN PURP 150V 250MA... |
BAV21W-G RHG | Taiwan Semic... | 0.03 $ | 6000 | DIODE GEN PURP 200V 200MA... |
BAV21W RHG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21WS RRG | Taiwan Semic... | 0.03 $ | 3000 | DIODE GEN PURP 250V 200MA... |
BAV21-TR | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 200V 250MA... |
BAV21WSTR | SMC Diode So... | 0.02 $ | 204000 | DIODE GEN PURP 200V 200MA... |
BAV21WS-TP | Micro Commer... | 0.03 $ | 78000 | DIODE GEN PURP 200V 200MA... |
BAV20W-TP | Micro Commer... | -- | 54000 | DIODE GEN PURP 150V 200MA... |
BAV21W-TP | Micro Commer... | -- | 21000 | DIODE GEN PURP 200V 200MA... |
BAV20W-7-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 150V 200MA... |
BAV20WS-7-F | Diodes Incor... | -- | 12000 | DIODE GEN PURP 150V 200MA... |
BAV23A,215 | Nexperia USA... | 0.05 $ | 1000 | DIODE ARRAY GP 200V 225MA... |
BAV21-T50R | ON Semicondu... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAV202-GS18 | Vishay Semic... | 0.02 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV21-T50A | ON Semicondu... | 0.02 $ | 1000 | DIODE GEN PURP 250V 200MA... |
BAV20WS-E3-18 | Vishay Semic... | 0.03 $ | 1000 | DIODE GEN PURP 150V 250MA... |
BAV21WS-G3-08 | Vishay Semic... | -- | 15000 | DIODE GEN PURP 200V 250MA... |
BAV21W-G3-08 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 250MA... |
BAV23C-E3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23C-HE3-18 | Vishay Semic... | 0.04 $ | 1000 | DIODE ARRAY GP 200V 200MA... |
BAV23CVL | Nexperia USA... | 0.04 $ | 1000 | DIODE ARRAY GP 200V TO236... |
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