BAV20WS-E3-18 Allicdata Electronics
Allicdata Part #:

BAV20WS-E3-18GITR-ND

Manufacturer Part#:

BAV20WS-E3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 150V 250MA SOD323
More Detail: Diode Standard 150V 250mA (DC) Surface Mount SOD-3...
DataSheet: BAV20WS-E3-18 datasheetBAV20WS-E3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02474
30000 +: $ 0.02328
50000 +: $ 0.02183
100000 +: $ 0.01940
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Description

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The BAV20WS-E3-18 is a small-signal diode with a combination of high blocking voltage, fast switching speed and low forward voltage drop, making it ideal for applications where power consumption is critical. It is a single-phase, dual-lead package, with a 0.3A current rating, and a breakdown voltage of 18V. The BAV20WS-E3-18 is available with two different types of sub-miniature packages, the ST-225 footprint and the ST-508 footprint.

The BAV20WS-E3-18 is designed for use in various types of small-signal electronics, such as converters, regulators, amplifiers, multiplexers and switching circuits. It has applications in various sectors, including computing, communications, power management, sensing and instrumentation. Some of the applications in which the BAV20WS-E3-18 is used include power cycle protection, power MOSFET drivers, peak power control and computing, relay control, switching circuits, and high frequency rectification.

The working principle of the BAV20WS-E3-18 is simple. When the switch is closed, current flows from the anode to the cathode, passing through the silicon junction, producing a voltage drop in the process. As more current flows, more voltage is dropped across the diode, allowing a relatively large amount of current to flow for a short period of time.

When the switch is opened, the reverse bias eliminates the current flow, and the voltage drop is then reversed as the diode switches from its “on” state to its “off” state, keeping the current from flowing in the wrong direction. The BAV20WS-E3-18 provides extremely low forward voltage drop and high blocking voltage, ensuring that the right amount of current flows at the right time. The diode is also designed with a fast switching speed, making it ideal for use in switching applications.

The BAV20WS-E3-18 is designed for use in a wide range of applications. Its fast switching speed and low forward voltage drop make it suitable for use in power cycle protection circuits, power MOSFET drivers, peak power control circuits and computing, relay control, switching circuits and high frequency rectification. It is also suitable for use in converters, regulators, amplifiers, multiplexers and other small-signal electronics. The diode range is also available in a number of different packages and configurations, making it the perfect choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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