BC337-25,126 Allicdata Electronics
Allicdata Part #:

568-1628-3-ND

Manufacturer Part#:

BC337-25,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 45V 0.5A TO92
More Detail: Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 625m...
DataSheet: BC337-25,126 datasheetBC337-25,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC337
Description

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BC337-25, 126 is a single bipolar junction transistor (BJT) commonly used as a general purpose component in low power amplifier applications. It belongs to the family of NPN non-saturated typical transistors, and is best suited for use in a wide range of electrical and/or electronic projects.

The BC337-25, 126 is a small-signal BJT whose power output is limited to just a few watts, making it an ideal choice for use in low power applications such as amplifying weak signals from audio or video sources. The device is an NPN transistor and therefore has an emitter, a base, and a collector. The BC337-25, 126 has a maximum collector current of 0.2A and a maximum power dissipation at 0.5 watts.

When connected to a power source, current flows through the base, which causes electrons to be released into the emitter. These electrons are then carried through the collector, completing the circuit. This type of circuit is known as a common emitter configuration. In this configuration, the collector-emitter current (Ic) is controlled by the amount of current flowing through the base-emitter junction (Ib). This determines the amount of current flowing into the collector and thus the gain of the amplifier.

The BC337-25, 126 has an alpha (β) of around 200, which is a slightly higher gain than most other BJT\'s. It has a collector-emitter voltage (Vce) of 45V and an emitter-base voltage (Veb) of 5V. This makes the BC337-25, 126 suitable for a variety of low power amplifier applications. These include amplifying low level audio and video signals, as well as driving low power DC circuits such as LED indicators.

The BC337-25, 126 also has a number of useful features, such as a low frequency cut-off of around 0.1Hz, ensuring that the signal is amplified correctly. The device also has an operating temperature range between -55 to +150 degrees Celsius, making it suitable for use in a wide range of temperatures and environments. The device also has a high breakdown voltage of 45V, which makes it suitable for use in more demanding applications.

The BC337-25, 126 is an ideal choice for low power amplifier applications, and can be used in a variety of projects. The device has a wide range of operating temperature, making it suitable for use in a range of environments, and has a good gain compared to other BJT’s. The device is also quite durable, and can withstand high breakdown voltages. All in all, the BC337-25, 126 is a highly cost-effective and reliable transistor solution for low power amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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