BC558 Allicdata Electronics
Allicdata Part #:

BC558-ND

Manufacturer Part#:

BC558

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 500m...
DataSheet: BC558 datasheetBC558 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 500mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC558
Description

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BC558 is a PNP type transistor, a three-terminal device that belongs to the class of BJTs (Bipolar Junction Transistors). It falls under the category of single transistors, meaning that it only has one type of base, collector, and emitter. BC558 is composed of a thin layer of semi-insulating crystalline silicon material which is used as an active region to control current flow. It is used to switch, amplify and route current between two different points. As such, it is widely used in various applications.

The main applications of BC558 are amplification, switching and signal routing. This transistor is primarily used for amplifying signals and is suitable for low-power applications. It is also used in amplifiers, radio frequency (RF) amplifiers, switching circuits and signal routing. Additionally, it is used to switch on and off high-current circuits, as well as to regulate current flow in power-sensitive applications. Apart from these main applications, BC558 also finds its use in oscillators, filters and detectors.

The base-emitter voltage (VBE) is the main parameter of BC558. This voltage is created when a current is passed through the emitter to the base of the transistor. The VBE is responsible for controlling the current flow through the transistor, and thus determines its operation mode. When the VBE is greater than the forward breakover voltage (FBV), then the transistor enters an active region, allowing current to flow from the emitter to the collector. In this region, a small amount of current at the base-emitter junction is amplified and greater current can then flow from the collector to the emitter.

The BC558 also has a reverse breakdown voltage (BVR), which determines the maximum amount of reverse voltage a transistor can sustain. This voltage is significant in applications where reversed voltages are applied to the transistor. When the BVR is exceeded, the transistor enters a breakdown region, where the current in the collector-base junction flows in the reverse direction.

BC558 has a wide range of uses due to its small size, low cost and low power consumption. It is a reliable device for amplifying and switching signals, as well as routing current in applications where voltage and current regulation is needed. The PNP design of BC558 also makes it suitable for other applications that require high-current switching and signal amplification. Its simple and cost-effective nature makes it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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