Allicdata Part #: | 1727-2920-2-ND |
Manufacturer Part#: |
BC846B,215 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 65V 0.1A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 250m... |
DataSheet: | BC846B,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01484 |
6000 +: | $ 0.01339 |
15000 +: | $ 0.01164 |
30000 +: | $ 0.01048 |
75000 +: | $ 0.00931 |
150000 +: | $ 0.00776 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BC846 |
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BC846B,215 Application Field and Working Principle
BC846B,215 is a PNP silicon epitaxial planar transistor designed specifically for use in small signal switching and general-purpose amplifier applications. Moreover, it is ideal for use in audio amplifier and low-noise circuits since it has a wide gain range of 50 ~ 1000 hFE, low noise figure and great collector-emitter saturation voltage.
Application Field
This transistor can be used for a variety of analog signal amplification and digital switching applications, including but not limited to:
- Audio amplifiers
- Switch mode power supplies
- Television receivers
- Generator amplifiers
- Contact cut of circuits
- High frequency amplifiers
- Motor control circuits
Working Principle
The BC846B,215 is a PNP transistor, which means that the majority charge carriers are holes. Thus, the base-collector junction is forward biased when a positive voltage is applied and the base-emitter junction is reverse biased when a negative voltage is applied. The current flow from the collector to the emitter relying on majority carriers, holes, is controlled by a current injection from the base to the collector.
Furthermore, the BC846B,215 device is a silicon planar epitaxial transistor. This construction is formed with a layer of high purity silicon on top of a single crystalline substrate base. The process of forming the base, emitter and collector regions on the epitaxial layer passivates the layer to ensure high reliability of the transistor.
Conclusion
The BC846B,215 is an all-purpose PNP silicon epitaxial planar transistor that is ideal for use in audio amplifiers, switch mode power supplies, television receivers, and other analog and digital applications. It functions as a current amplifier and is able to regulate the current flow in the base to collector junction.
The specific data is subject to PDF, and the above content is for reference
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