BC846BPDW1T1G Allicdata Electronics
Allicdata Part #:

BC846BPDW1T1GOSTR-ND

Manufacturer Part#:

BC846BPDW1T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 65V 0.1A SOT363
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 65V 100mA ...
DataSheet: BC846BPDW1T1G datasheetBC846BPDW1T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 380mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: BC846BP
Description

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BC846BPDW1T1G

Application Field and Working Principle

The BC846BPDW1T1G is a digital transistor array specifically designed by NXP Semiconductors for general purpose amplification and switching applications.

It is a member of the BC846 family of transistors, which are low voltage, ultra-low-power, small-signal NPN transistors with several packages and topology options designed for general purpose audio, radio, and data acquisition applications.

The BC846 has a variety of patterns, each designed for specific applications.

Features

  • Low voltage operation from 1.8V to 15V
  • Ultra low power consumption
  • Low input and output capacitance
  • High gain and low operating current
  • Schottky diode protection available

Applications

  • Audio amplifiers
  • General purpose switching
  • Data acquisition and signal conditioning
  • Radio frequency (RF) signal processing
  • Instrumentation amplifier circuits
  • Optoelectronics applications

Working Principle

The BC846BPDW1T1G is a complementary pair of four NPN transistors. It is designed with a low collector-emitter leakage current and a low base-emitter voltage, resulting in low current consumption and very low power loss.

Each transistor has a base and two collectors. The two collectors are used to drive two loads with one of the transistors, and the other two transistors are used to drive the other two loads. This allows for much faster switching times and more efficient current handling. Each transistor also has a Schottky diode added internally in order to limit the effect of electrical transients on the device.

The transistors can be used in arrays for more sophisticated circuits, such as analog-to-digital converters (ADCs), digital-to-analog converters (DACs), or logic circuits. These arrays can be used to create amplifiers, logic gates, and other digital circuit components. This makes the BC846BPDW1T1G a versatile and powerful device for many applications.

The specific data is subject to PDF, and the above content is for reference

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