Allicdata Part #: | BC846BTTR-ND |
Manufacturer Part#: |
BC846BT TR |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 65V 0.1A SOT523 |
More Detail: | Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 250m... |
DataSheet: | BC846BT TR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.07859 |
6000 +: | $ 0.07382 |
15000 +: | $ 0.06906 |
30000 +: | $ 0.06350 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SOT-523 |
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Bipolar junction transistors, or BJTs, are active components that are commonly used as amplifiers, switches and signal control circuits. The BC846BT TR is a BJT manufactured by Philips Semiconductors. It is a small signal NPN transistor and can be used in a variety of applications, ranging from low-power consumer electronics to high-power industrial electronics. This article will discuss the application field and working principle of the BC846BT TR.
Application Field
The BC846BT TR is suitable for small signal amplification and switching applications. It can handle up to 625 mW of power and has an hFE maximum of 250. This makes it suitable for signal conditioning, signal amplification, and switching applications in low and medium power systems. It is also used commonly in audio and video systems and other consumer electronics products.
The BC846BT TR is also suitable for high-power industrial electronics such as injection moulding machines, current-controlled power supplies and general purpose AC/DC power applications where a low base drive voltage is required. It can handle up to 500V, making it suitable for a variety of industrial applications.
Working Principle
The BC846BT TR is a NPN silicon transistor. This type of transistor consists of two layers of doped silicon separated by a layer of pure silicon. This three-layer configuration enables the transistor to act as a current amplifier. The two doped layers are called the emitter and the collector. When the base layer is connected to a voltage source, it causes current to flow between the emitter and collector layers. This current flow then amplifies the voltage at the collector layer with respect to the emitter layer.
The BC846BT TR has an hFE maximum of 250, which implies that the collector current will be 250 times higher than the base current. It also has a high operating frequency range of 1MHz – 500kHz and a low collector-emitter saturation voltage of 0.2V. All these properties make the BC846BT TR highly suitable for applications requiring high current gain and low switching times.
Conclusion
In conclusion, the BC846BT TR is a small signal NPN BJT manufactured by Philips Semiconductors. It is suitable for small signal amplification and switching applications in low-power consumer electronics and high-power industrial electronics products. The BC846BT TR has an hFE maximum of 250 and a high operating frequency range of 1MHz – 500kHz, making it highly suitable for high-current gain and low-switching time applications.
The specific data is subject to PDF, and the above content is for reference
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