BC846S/DG/B3F Allicdata Electronics
Allicdata Part #:

BC846S/DG/B3F-ND

Manufacturer Part#:

BC846S/DG/B3F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS GEN PURPOSE SC-88
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 10...
DataSheet: BC846S/DG/B3F datasheetBC846S/DG/B3F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The BC846S/DG/B3F is a type of small signal transistor which belongs to the category of Transistors - Bipolar (BJT) - Arrays. It is a general-purpose PNP Bipolar Junction Transistor with features suited for many different applications. The BC846S/DG/B3F is frequently used in amplifying and switching circuits, as well as in the fields of optical and logic devices.

Package Details

The BC846S/DG/B3F comes in the SOT-23 package, making it small and lightweight. These physical characteristics make the BC846S/DG/B3F suitable for use in space-restricted workspaces, such as tightly-packed circuit boards. The unit is constructed from silicon material and has three leads.

Typical Applications

Typical applications for the BC846S/DG/B3F include audio amplifiers, telephone circuits, non-linear resistors, loudspeakers, power supplies, switching circuits and protection circuits.

Advantages

The BC846S/DG/B3F is a very efficient type of transistor that provides high output current, low input current and low collector-emitter voltage. Additionally, it has very low switching and offset times.

Working Principle

Essentially, the BC846S/DG/B3F works on the principle of the P-N junction. This is based on the semiconductor’s properties of both conducting and insulating parts of the material. The Transistor acts as a switch with the collector-base output current flow. The level of current is determined by the control current flowing through the base-emitter. Also, the transistor switches on when there is an increase in voltage at the base-emitter junction. Conversely, it switches off when the voltage is decreased. The BC846S/DG/B3F has the following features that make it ideal for many applications: - Low voltage base-emitter (VBE(SAT)) - High current gain (hFE) - Low output resistance - Excellent switching characteristics The device is manufactured using planar and high voltage technologies, allowing for operation in both low voltages and higher voltages as required.

Conclusion

The BC846S/DG/B3F is a small-signal transistor array with a range of applications. It is packaged in SOT-23, making it suitable for use in space-restricted workspaces. The BC846S/DG/B3F has a range of advantages, including high output current, low input current, fast switching times and low collector-emitter voltage. It is also easy to use, thanks to its P-N junction principle which allows for smooth operation.

The specific data is subject to PDF, and the above content is for reference

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