Allicdata Part #: | BC847BLT3-ND |
Manufacturer Part#: |
BC847BLT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300m... |
DataSheet: | BC847BLT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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The BC847BLT3 is a PNP bipolar junction transistor (BJT) that belongs to a larger family of small signal NPN and PNP transistors made by NXP Semiconductors. It is also part of the BC8 series of BJTs that are typically used with low voltage, low power, and low current applications.
The collector current capacity of the BC847BLT3 is 200mA, the collector-emitter voltage is 40V, the collector-base voltage is 50V, the emitter-base voltage is 5V and the power dissipation is 500mW. The DC current gain, hFE can range from 300-900, the saturation voltage is 0.2V (TYP) and the switching time is 15ns (TYP). This BJT has a low noise figure of 0.5dB (TYP).
The BC847BLT3 can be used in various applications such as amplifiers, switches, and logic gates. In amplifiers, it is mainly used as an active element in various circuits such as differential amplifiers and single stage amplifiers. The normal bias for the BC847BLT3 is around 20mA and the operating frequency varies between 1kHz to up to 1MHz. It is especially useful in low noise applications that require fast response times and high gain.
In switching applications, the BC847BLT3 has the ability to handle high frequency signals while still maintaining a low on-state resistance. It is mainly used in power management and motor control circuits. It is also used in logic gates and logic power switches. In logic gates, it is used to provide logic level voltage to a variety of gate configurations, including AND, OR, and NOT gates.
The working principle of the BC847BLT3 is based on the PNP structure. This PNP transistor has two layers of semiconductor material. The bottom layer is made from P-type semiconductor material, while the top layer is composed of N-type semiconductor material. Between the two layers, there is a middle layer made from base material and an emitter material. When a voltage is applied to the base layer, it causes a current to flow through the collector and emitter material, resulting in a gain or amplification of the signal.
The BC847BLT3 is a common PNP BJT found in many circuits and can be used in different applications for amplifiers, switching, and logic gates. It has a low noise figure and a wide range of hFE, which makes it ideal for high signal gain applications. It is a reliable BJT offering fast response time and low on-state resistance, allowing it to be used in power management and motor control applications as well. It works based on the PNP structure, with a voltage applied to the base layer resulting in current flowing through the collector and emitter material, thus providing a gain to the signal.
The specific data is subject to PDF, and the above content is for reference
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