BC847BPN,135

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The BC847BPN,135 is an integrated circuit that is categorized as a Transistors – Bipolar (BJT) Array. This type of transistor is made up of several individual transistors that are connected together and share common pins, with the entire circuit relying on a single package.

The BC847BPN,135 Transistor Array is composed of four transistors arranged into two separate parts. The first part is a BJT transistor array which consists of two small signal transistors. These separate transistors are connected in a Darlington configuration, with each transistor having its own emitter, base, and collector pins. The second part is an output transistor array which consists of two power transistors that are connected in a Darlington configuration as well. Each of these transistors has its own emitter, base, and collector pins.

The BC847BPN,135 Transistor Array is designed to have a wide operating temperature range of - 65⁰C to +175⁰C. It also has a high frequency rating of 200 MHz, a high gain bandwidth range of 500 kHz to 10 MHz, and a low collector to emitter saturation voltage of 0.4 volts. The maximum collector current for each transistor is 20 mA, the maximum collector power dissipation per transistor is 400 mW, and the collector to emitter breakdown voltage of each transistor is 40 volts.

The BC847BPN,135 can be used for a variety of applications, including amplifiers, switching circuits, oscillators, and multiple-winding transformers. It is also suitable for automotive, computer, and medical equipment applications. Additionally, this transistor can be used in applications which require high current performance, high frequency, and low power dissipation.

The working principle of the BC847BPN,135 Transistor Array is the same as other transistors. When power is applied to the base of the first transistor in the array, a current is generated. This current is then amplified by the second transistor in the array, and it is passed to the output transistor in the array, where it is further amplified and released to the external components which are connected to the transistor array.

The BC847BPN,135 Transistor Array is a highly reliable, efficient and versatile device that can be used in a range of applications. Its wide operating temperature range, high frequency rating, and low collector to emitter saturation voltage make it an ideal choice for applications requiring high performance and reliability. Additionally, its low power dissipation and collector to emitter breakdown voltage make it suitable for high current applications.

In conclusion, the BC847BPN,135 Transistor Array is an excellent choice for a variety of applications. It is highly reliable, efficient, and versatile, and it offers a wide operating temperature range, high frequency rating, and low collector to emitter saturation voltage. Additionally, its low power dissipation and collector to emitter breakdown voltage make it suitable for use in high current applications.

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