BC847BWE6327BTSA1

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Transistors - Bipolar (BJT) - Single

The BC847BWE6327BTSA1 is a single subminiature NPN Bipolar junction transistor (BJT) typically used in low current applications such as switching, signal amplification, and current switching. Housed in a small 0.2” surface mount package, the BC847BWE6327BTSA1 features a very low collector-emitter saturation voltage (Vce(sat)) of 0.1V and a very low base-emitter voltage drop of 0.6V, making it a highly efficient device. The wide temperature range of -40°C to +150°C allows this transistor to be used in a variety of diverse applications, including automotive and military.

The BC847BWE6327BTSA1 application field mainly includes two categories: switching and amplifier. The BC847BWE6327BTSA1 is highly efficient as a switch. This transistor can be used as a switch in applications such as controlling motors, current regulators, and pulse sources. It is also possible to use the BC847BWE6327BTSA1 as an amplifier. The low Base-Emitter voltage drop and low Collector-Emitter saturation voltage of the BC847BWE6327BTSA1 makes it ideal for input stages of audio amplifiers and RF amplifiers, allowing a wide range of signals to be amplified without distortion.

The BC847BWE6327BTSA1 working principle is based on conventional bipolar junction transistor (BJT) operation. This device works similarly to a three-pin switch. It has an emitter pin (E), a base pin (B) and a collector pin (C). The device operates on the principle of a non-linear dependence of the Collector current (IC) on the Base current (IB). The current flow through the Collector-Emitter path (IC) is dependent on the amount of current flowing through the Base-Emitter path (IB).

In the BC847BWE6327BTSA1 the base is a small controlled current source, while the emitter is the current sink. The BC847BWE6327BTSA1 works in two modes, either an active mode or a saturation mode. In the active mode, the BC847BWE6327BTSA1 acts as a current amplifier and the transistor acts as a switch connecting the collector to the emitter. This results in current flow in the collector-emitter direction. A large base current (I B ) causes the BC847BWE6327BTSA1 transistor to enter the saturation mode, acting as a nearly perfect switch, allowing for both very high collector current and high gain at the same time.

The BC847BWE6327BTSA1 is designed to be as efficient as possible, as it is housed in a small surface mount package. This allows for increased thermal regulation, improved power consumption and overall reliability. The BC847BWE6327BTSA1 has a very low collector-emitter saturation voltage (Vce(sat)) of 0.1V and a very low base-emitter voltage drop of 0.6V, making it highly efficient for switching and signal amplification applications. The wide temperature range of -40°C to +150°C and low power consumption make the BC847BWE6327BTSA1 suitable for automotive, industrial and military applications.

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