Allicdata Part #: | BC848AE6327HTSA1TR-ND |
Manufacturer Part#: |
BC848AE6327HTSA1 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 250MHz 330m... |
DataSheet: | BC848AE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
48000 +: | $ 0.01186 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 2mA, 5V |
Power - Max: | 330mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BC848 |
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Application Field and Working Principle of BC848AE6327HTSA1
BC848AE6327HTSA1 is a type of NPN bipolar junction transistors (BJTs). BJTs are usually used as an amplifier and switching device, and BC848AE6327HTSA1 is mainly used to be a switching device. The BC848AE6327HTSA1 can be used in audio amplifiers, digital circuitsand etc.
Operation of BC848AE6327HTSA1
BC848AE6327HTSA1 operates with three terminals, Emitter (E), Collector (C) and Base (B). The emitter and collector are separated by a thin layer of N-type and P-type semiconductor material, forming a PN junction. The operation of BC848AE6327HTSA1 is mainly relying on the PN junction and base current. When a voltage (Vb) is applied between Base and Emitter, it will create a very small current (Ib) to the PN junction. This base current will affect the electrons and holes flow across the PN junction, forming a larger current amplitude Ie at the Emitter and Ic at the collector. Ib is kept at a very low value for optimal operating of BJTs. Thus, the amplified voltage and current can be monitored at the collector terminal.
Advantages of BC848AE6327HTSA1
BC848AE6327HTSA1 has some advantages over other kinds of transistors. One of the main advantages is its higher breakdown voltage. This means that the transistor can handle higher voltage level, thus, it makes it possible for the circuit to be more stable in terms of input and output signals. In addition to its higher breakdown voltage, BC848AE6327HTSA1 is also able to provide better operating margins in terms of current gain and current leakage. This allows the transistor to have a better performance in terms of amplification and switching purpose.
Limitations of BC848AE6327HTSA1
BC848AE6327HTSA1 is not suited for high-frequency applications. It has a high capacitance between the base and collector, and the capacitance increases exponentially when the frequency is higher, this leads to the transistor having high insertion loss and low switching speed. Also, the current gain of the BC848AE6327HTSA1 is limited, this makes it difficult to use the transistor for high power applications.
Conclusion
The BC848AE6327HTSA1 is a type of NPN bipolar junction transistors which are used for switching and amplifying purposes. It differs from other types of transistors with its higher breakdown voltage and improved operating margins. However, the current gain and switching speed of the transistor are limited. Thus, making it difficult to use it in high frequency or high power applications.
The specific data is subject to PDF, and the above content is for reference
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