BCP 55-16 E6327 Allicdata Electronics
Allicdata Part #:

BCP55-16E6327TR-ND

Manufacturer Part#:

BCP 55-16 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 60V 1A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 100MHz 2W Surf...
DataSheet: BCP 55-16 E6327 datasheetBCP 55-16 E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BCP55
Description

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Transistors have traditionally been made of three-layer semiconductor materials like silicon and germanium, in which electrons and holes are the main types of charge carriers. However, due to advances in silicon technology and the development of new materials, transistors have become increasingly miniaturized, and now come in all sorts of shapes and sizes. The BCP 55-16 E6327 transistors are one example of such miniaturized transistors, and they can be categorized as single-layer bipolar junction transistors (BJTs).

BCP 55-16 E6327 transistors are general-purpose, high-speed transistors, suitable for various applications such as digital and analog signal-processing, power amplification, switching and logic circuits. The transistor\'s small size, low power consumption and high performance make it a perfect choice for high-density circuits such as mobile phone applications. In addition, these transistors are environmentally friendly, as they are lead-free.

The working principle of the BCP 55-16 E6327 transistor is based on the fact that it contains two PN junctions. It is essentially comprised of two oppositely-doped layers of semiconductor material that are kept very close together. These layers are referred to as the emitter, base and collector. The base layer is thin and has very low doping, while the emitter and collector layers have higher doping. When current flows through the emitter, a voltage is applied across the base-collector junction, resulting in a current flow through the collector.

When the emitter-base junction is forward biased, electrons are injected into the base region from the emitter, and holes are injected into the collector from the base. This results in a current flow in the collector and a current flow in the base, the magnitude of which depends on the amount of forward bias voltage applied. When the base-collector junction is reverse biased, a depletion zone is formed around the region, blocking current from flowing in that direction.

By controlling the amount of current flowing through the BCP 55-16 E6327 transistor, it is possible to control the amount of current flowing through the collector. This enables designers to use the transistor as an amplifier, switching circuit, logic gate or other circuit element. In addition, the high frequency performance of the device makes it ideal for use in high-speed digital applications.

The BCP 55-16 E6327 transistors are widely used in various analog and digital applications. It can be used as an amplifier, switching circuit, logic gate or other circuit element. It has excellent high-frequency performance and makes it perfect for high-speed digital applications. Its small size, low power consumption and high performance make it an ideal choice for high-density circuits such as mobile phone applications. Because it is lead-free, it is also an environmentally friendly choice.

The specific data is subject to PDF, and the above content is for reference

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