BCP55,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	1.35W
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	BCP55

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Introduction

BCP55 and BCP 135 are two types of Bipolar Junction Transistors (BJTs). Traditionally, BJTs are used for analog signal amplification, allowing the signal to pass through low-impedance loads with low distortion and high linearity. BJT transistors offer several benefits, such as controllable polarity, low noise, and low power consumption. While many BJT applications are found in industrial and manufacturing industries, these transistors can also be used in various electronic devices where signal amplification is required.

BCP55 and BCP 135 Application Fields

BJT transistors, such as the BCP55 and BCP 135, are widely used in a variety of applications. For example, these types of transistors are used in power supplies, amplifiers, switches, and low-power regulators. They can also be used in audio systems, mobile communications, radio transmitters, and high-speed data transfer systems. BJT transistors are also commonly found in automotive, medical and security systems.The BCP55 and BCP 135 are especially suitable for applications that require low noise performance and low power consumption. They can be used in industrial and automotive applications, as well as in consumer electronics.

BCP55 and BCP 135 Working Principle

BJT transistors, such as the BCP55 and BCP 135, operate by utilizing the properties of charge carriers. When a BJT is in its active region, the base-emitter voltage is applied, causing an increase in the number of charge carriers in the base region. As a result, the base-collector junction acts as a diode, providing forward bias and allowing current to flow from the collector to the emitter.The gain of a BJT is determined by the ratio of current that flows from the collector to the emitter. This value is known as the common-emitter current gain or hfe. The hfe value of BCP55 and BCP 135 transistors is typically between 100 and 200.

Conclusion:

BCP55 and BCP 135 are two types of BJT transistors that can be used in a variety of applications. These transistors are suitable for applications that require low noise performance and low power consumption. The gain of BCP55 and BCP 135 transistors is determined by the hfe value, which is typically between 100 and 200. By utilizing the properties of charge carriers, these transistors are able to provide low distortion and high linearity when amplifying analog signals.

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