Allicdata Part #: | BCR185SB6327XTTR-NDTR-ND |
Manufacturer Part#: |
BCR185SB6327XT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | BCR185SB6327XT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 200MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: | PG-SOT363-6 |
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BCR185SB6327XT transistors consist of five independent NPN transistors in a tiny SOT-363 package, pre-biased for particular applications. They are commonly used in portable and battery operated equipment, where space conservation and good electrical performance is necessary. Futhermore, the BCR185SB6327XT has a low voltage drop accommodating in low current applications.
When considering the applications of BCR185SB6327XT transistors, they are suitable for many general purpose designs, such as switching and amplifier circuits. They are also useful as analogue multipliers and attenuators, and can be used to construct current mirrors. Additionally, they can be integrated into motor drives and motion controls.
Futhermore, considering the working principle of BCR185SB6327XT transistors, the devices area PNP/NPN bipolar transistors. They are two independent transistors per package, with a common base terminal. As the devices are base terminal connected, one of the devices is always in saturation and the other in cutoff. The base-emitter junction is forward biased and the base-collector junction is reverse biased. The voltage developed across the two terminals, or the Width Voltage (VBE) controls the current flow, and therefore the collector current.
The main advantage of using BCR185SB6327XT arrays is their low power dissipation. As the base-emitter junction is slightly forward biased, the conduction losses are very low, and idle current is almost negligible. Moreover, the device features excellent switching characteristics including fast switching times and broad frequency ranges. The device also includes a thermal shutdown protection circuitry to prevent over temperature damages.
In conclusion, the BCR185SB6327XT transistors is a low power consumption and versatile device, suitable for a variety of general purpose designs. Its low voltage drop and fast switching times make it perfect for low current applications and also motor drives. Therefore, it can be easily integrated into modern desings for an efficient and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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