BCR198SH6827XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	190MHz
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-6

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Introduction
BCR198SH6827XTSA1 is a type of Transistors–Bipolar(BJT) Arrays Pre-Biased, which contains an array of 8 transistors in one encapsulation. These are specifically designed combination arrays that contains eight NPN transistors. It is an enhanced version of BCR198SH6827XTA1, with the capability of working in lower supply voltage. Similarly, the package of the BCR198SH6827XTSA1 is also reduced to the WLCSP (Wafer Level Chip Scale Package) and is incorporated with SOT (Small Outline Transistor) packages for two or more transistors.

BCR198SH6827XTSA1
BCR198SH6827XTSA1 transistors can be used to control a large current simultaneously from a small logic signal. The NPN transistors are constructed by using a thinly-spread epitaxial layer on a single substrate. A PN junction is added at the start of the substrate to form a transistor structure. It also has four mounting pads and a ball-out option for surface mount applications.

Features
The features of BCR198SH6827XTSA1 transistor series include:
• It has an Ultra Low ON-State Resistance for improved efficiency
• It has an Expanded Maximum Junction Temperature of 150°C.
• It is Compliant with AEC-Q100 Standard
• Package: WLCSP
• Voltage ratings ranging from (5 V) to (25 V)
• Upper power dissipation of up to 7 W
• Low noise at high speed
• Low thermal resistance
• The maximum collector current is 7A
• High switching time

Applications
BCR198SH6827XTSA1 transistor series is commonly used in a wide range of applications such as DC-DC Converters, Power Management, Antenna Tuners, Cellular Chargers, Battery Chargers, Computer Motherboards, PCs, Vibration Motors, and Automotive applications. These Transistors are specifically designed for controlling various currents and voltages used in the contemporary applications. They are particularly used for battery shifting and switching, low noise and high speed applications, DC-DC converters, power management, and multi-level DC/DC converters applications in the automotive industries, communication industries, and in the consumer electronics industries.

Working Principle
A BCR198SH6827XTSA1 transistor is a type of three-terminal semiconductor device that is operated by a current input. It controls the current flow between two electrodes (Base and Collector) of a transistor by a smaller current flow and voltage between the Base and Emitter terminals. The transistor has a PN junction between Collector and Emitter terminals. The current flowing through the base, controls the Collector current. Thus, BCR198SH6827XTSA1 transistors can act as a switch, amplifier, and provide integrated solutions to analog circuits and provide new ways of circuit solutions.

Conclusion
BCR198SH6827XTSA1 transistors are specifically designed for various low voltage and low power applications. It can be used in high speed and low noise applications as well as in DC-DC power converters. These transistors also offer enhanced performance and are compliant with AEC-Q100 standards. It is also incorporated with a four mounting pads, and an improved user design options. Thus, it proves to be an ideal choice for modern applications.

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