Allicdata Part #: | 1727-5464-2-ND |
Manufacturer Part#: |
BCV61,215 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 30V 100MA DUAL SOT143B |
More Detail: | Transistor Current Mirror 2 NPN (Dual) Current Mir... |
DataSheet: | BCV61,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.11873 |
6000 +: | $ 0.11108 |
15000 +: | $ 0.10341 |
30000 +: | $ 0.10214 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Current Mirror |
Applications: | Current Mirror |
Voltage - Rated: | 30V |
Current Rating: | 100mA |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BCV61 |
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The BCV61, 215, which belongs to the category of special purpose transistors, is a type of N-channel, depletion mode MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a three-terminal device, typically comprising a source, a gate, and a drain. Its device operation is determined by the type of semiconductor material used, the size and shape of the device, and its various physical parameters, such as gate-channel capacitance and threshold voltage.
When the MOSFET is in the off state, the gate-to-drain and gate-to-source capacitance is very low, which is known as the depletion region. When a suitable voltage is applied between the gate and the drain, electrons start flowing from the drain to the gate, resulting in a weak electrical pull on the electrons, increasing the current and reducing the on-state resistance.
The BCV61, 215 can be used for a variety of applications, such as low noise amplifiers, switch and multiplexer circuits, as well as power amplifier stages. Its use as a power amplifier is particularly interesting, as it can drastically reduce power consumption, while providing a high voltage gain. This is due to the low on-state resistance offered by the device, which prevents power dissipation.
The device has two working principles, the first of which is the linear operation region. In this region, the on-state resistance is kept constant, and the drain current increases linearly with gate-to-drain voltage. The second working principle, which is also known as the saturation region, occurs when the voltage applied to the gate increases, thus resulting in a large increase in the drain current, while the on-state resistance decreases. This is beneficial in applications where the output signal needs to remain high while the current delivery remains low.
In addition, the BCV61, 215 has many operational advantages over conventional FETs, such as lower gate leakage current, higher maximum allowable drain-source voltage, and improved thermal resistance. Furthermore, due to its high input impedance, the device is suitable for use in many high-frequency applications. Its small size and high current carrying capacity also makes it suitable for a variety of applications, such as low noise amplifiers and switch circuits.
The BCV61, 215 is a useful device for a wide variety of applications, especially in the area of power electronics. Its low on-state resistance and high voltage gain make it suitable for applications such as high current amplifiers, switch and multiplexer circuits, as well as power amplifier stages. Furthermore, its excellent thermal resistance, improved gate leakage current, and higher maximum allowable drain-source voltage make it an ideal choice for high-frequency applications. In short, the BCV61, 215 is an extremely reliable device with a variety of features that make it ideally suited for a wide range of uses.
The specific data is subject to PDF, and the above content is for reference
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