BCV61CE6327HTSA1 Allicdata Electronics

BCV61CE6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BCV61CE6327HTSA1TR-ND

Manufacturer Part#:

BCV61CE6327HTSA1

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR NPN DOUBLE SOT-143
More Detail: Transistor Current Mirror 2 NPN, Base Collector Ju...
DataSheet: BCV61CE6327HTSA1 datasheetBCV61CE6327HTSA1 Datasheet/PDF
Quantity: 15000
3000 +: $ 0.05755
6000 +: $ 0.05180
15000 +: $ 0.04604
30000 +: $ 0.04316
75000 +: $ 0.03837
Stock 15000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Voltage - Rated: 30V
Current Rating: 100mA
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4
Base Part Number: BCV61
Description

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One of the most important members in the class of special purpose transistors is the BCV61CE6327HTSA1. This is an N–Channel Enhancement mode insulated-gate field-effect transistor (MOSFET) that can be used in a variety of applications. It is specially designed to meet the requirements in high precision driving and switching applications that are sensitive to both cost and power consumption.

The BCV61CE6327HTSA1 features a maximum drain–source voltage rating of 50 V, a maximum drain current of 1.6 A and a maximum power dissipation of 300 mW which makes it ideal for use in high power applications. It also has a low threshold voltage (VGS TYP = 1.2 V) which makes it well suited for switching at low voltages.

In addition to its suitability for switching applications, the BCV61CE6327HTSA1 also has good linearity for high precision analog control and driving. It offers low on-state resistance and fast switching speed, making it suitable for high frequency switching as well. The BCV61CE6327HTSA1 is also ESD-protected and can withstand up to 2KV of electrostatic discharge.

The working principle of the BCV61CE6327HTSA1 is based on the concept of a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a four terminal semiconductor device with three regions: the source, gate, and drain. When a voltage is applied to the gate, it changes the channel between the source and drain, allowing current to flow. The more voltage applied to the gate, the more current can flow. This property of being able to control the flow of current without having to apply a large driving voltage is what makes the BVC61CE6327HTSA1 so useful for a variety of applications.

The BCV61CE6327HTSA1 is used in cell phones, tablet computers, wireless base stations, cable TV systems, and various other applications that require high precision control and fast switching. Its small size and low power consumption make it ideal for use in battery operated devices, and its wide range of voltage and current ratings make it suitable for use in demanding applications.

The BCV61CE6327HTSA1 is an important part of any engineer’s toolkit and is invaluable for constructing circuits that require fast and precise control. With its unique combination of features and performance, it is sure to find a place in many different applications.

The specific data is subject to PDF, and the above content is for reference

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