BCV61CE6327HTSA1 Discrete Semiconductor Products |
|
Allicdata Part #: | BCV61CE6327HTSA1TR-ND |
Manufacturer Part#: |
BCV61CE6327HTSA1 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN DOUBLE SOT-143 |
More Detail: | Transistor Current Mirror 2 NPN, Base Collector Ju... |
DataSheet: | BCV61CE6327HTSA1 Datasheet/PDF |
Quantity: | 15000 |
3000 +: | $ 0.05755 |
6000 +: | $ 0.05180 |
15000 +: | $ 0.04604 |
30000 +: | $ 0.04316 |
75000 +: | $ 0.03837 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | 2 NPN, Base Collector Junction |
Applications: | Current Mirror |
Voltage - Rated: | 30V |
Current Rating: | 100mA |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | PG-SOT143-4 |
Base Part Number: | BCV61 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
One of the most important members in the class of special purpose transistors is the BCV61CE6327HTSA1. This is an N–Channel Enhancement mode insulated-gate field-effect transistor (MOSFET) that can be used in a variety of applications. It is specially designed to meet the requirements in high precision driving and switching applications that are sensitive to both cost and power consumption.
The BCV61CE6327HTSA1 features a maximum drain–source voltage rating of 50 V, a maximum drain current of 1.6 A and a maximum power dissipation of 300 mW which makes it ideal for use in high power applications. It also has a low threshold voltage (VGS TYP = 1.2 V) which makes it well suited for switching at low voltages.
In addition to its suitability for switching applications, the BCV61CE6327HTSA1 also has good linearity for high precision analog control and driving. It offers low on-state resistance and fast switching speed, making it suitable for high frequency switching as well. The BCV61CE6327HTSA1 is also ESD-protected and can withstand up to 2KV of electrostatic discharge.
The working principle of the BCV61CE6327HTSA1 is based on the concept of a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. It is a four terminal semiconductor device with three regions: the source, gate, and drain. When a voltage is applied to the gate, it changes the channel between the source and drain, allowing current to flow. The more voltage applied to the gate, the more current can flow. This property of being able to control the flow of current without having to apply a large driving voltage is what makes the BVC61CE6327HTSA1 so useful for a variety of applications.
The BCV61CE6327HTSA1 is used in cell phones, tablet computers, wireless base stations, cable TV systems, and various other applications that require high precision control and fast switching. Its small size and low power consumption make it ideal for use in battery operated devices, and its wide range of voltage and current ratings make it suitable for use in demanding applications.
The BCV61CE6327HTSA1 is an important part of any engineer’s toolkit and is invaluable for constructing circuits that require fast and precise control. With its unique combination of features and performance, it is sure to find a place in many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BCV61CE6327HTSA1 | Infineon Tec... | 0.06 $ | 15000 | TRANSISTOR NPN DOUBLE SOT... |
BCV62A,215 | Nexperia USA... | 0.16 $ | 27000 | TRANS PNP 30V 100MA DUAL ... |
BCV62,215 | Nexperia USA... | 0.1 $ | 3000 | TRANS PNP 30V 100MA DUAL ... |
BCV61A,215 | Nexperia USA... | 0.15 $ | 3000 | TRANS NPN 30V 100MA DUAL ... |
BCV61B,215 | Nexperia USA... | 0.15 $ | 3000 | TRANS NPN 30V 100MA DUAL ... |
BCV61B,235 | Nexperia USA... | 0.13 $ | 1000 | TRANS NPN 30V 100MA DUAL ... |
BCV61,235 | Nexperia USA... | 0.13 $ | 1000 | TRANS NPN 30V 100MA DUAL ... |
BCV61,215 | Nexperia USA... | 0.13 $ | 1000 | TRANS NPN 30V 100MA DUAL ... |
BCV62B,215 | Nexperia USA... | 0.13 $ | 1000 | TRANS PNP 30V 100MA DUAL ... |
BCV61C,215 | Nexperia USA... | 0.43 $ | 2096 | TRANS NPN 30V 100MA DUAL ... |
BCV61BE6327HTSA1 | Infineon Tec... | 0.06 $ | 1000 | TRANSISTOR NPN DOUBLE SOT... |
BCV62C,215 | Nexperia USA... | 0.16 $ | 1000 | TRANS PNP 30V 100MA DUAL ... |
BCV62B,235 | Nexperia USA... | 0.11 $ | 1000 | TRANS PNP 30V 100MA DUAL ... |
BCV61BE6433HTMA1 | Infineon Tec... | 0.05 $ | 1000 | TRANSISTOR NPN DOUBLE 45V... |
BCV62,235 | Nexperia USA... | 0.08 $ | 1000 | TRANS PNP 30V 100MA DUAL ... |
BCV62AE6327HTSA1 | Infineon Tec... | 0.06 $ | 12000 | TRANS 2PNP 30V 0.1A SOT14... |
BCV63B,215 | Nexperia USA... | 0.13 $ | 9000 | TRANS 2NPN 30V/6V 0.1A SO... |
BCV64B,215 | Nexperia USA... | 0.13 $ | 3000 | TRANS 2PNP 30V/6V 0.1A SO... |
BCV63,215 | Nexperia USA... | 0.13 $ | 3000 | TRANS 2NPN 30V/6V 0.1A SO... |
BCV62CE6327HTSA1 | Infineon Tec... | 0.06 $ | 1000 | TRANS 2PNP 30V 0.1A SOT14... |
BCV62BE6327HTSA1 | Infineon Tec... | 0.06 $ | 12000 | TRANS 2PNP 30V 0.1A SOT14... |
BCV62BE6433HTMA1 | Infineon Tec... | 0.05 $ | 1000 | TRANS 2PNP 30V 0.1A SOT14... |
BCV65,215 | Nexperia USA... | 0.11 $ | 1000 | TRANS NPN/PNP 30V 0.1A SO... |
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...
IC MOSFET DRIVER SC-59ATransistor Gate D...