BCV61C,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-4899-1-ND |
Manufacturer Part#: |
BCV61C,215 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 30V 100MA DUAL SOT143B |
More Detail: | Transistor Current Mirror 2 NPN (Dual) Current Mir... |
DataSheet: | BCV61C,215 Datasheet/PDF |
Quantity: | 2096 |
1 +: | $ 0.39060 |
10 +: | $ 0.33201 |
100 +: | $ 0.24803 |
500 +: | $ 0.19486 |
1000 +: | $ 0.15058 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Current Mirror |
Applications: | Current Mirror |
Voltage - Rated: | 30V |
Current Rating: | 100mA |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BCV61 |
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The BCV61C, 215 is classified as a Special Purpose Transistor, primarily used for high speed switching applications. It is designed for inductive loads to reduce switching losses by utilizing an integrated high-speed clamp diode to conduct the load current. There are several types of transistors that are currently in use, but the BCV61C, 215 is ideal for meeting the requirements for applications that require a fast switching period.
The BCV61C, 215 is available as both an n-type and p-type field effect transistor. Its structure allows it to be used as a rectifier, allowing it to switch between a high and a low state quickly. The device has a high current capacity, which makes it suitable for higher current switching applications. It can also switch between a high to low state in only a few nanoseconds, making it ideal for high frequency switching. The device also has a number of features that make it well suited to applications requiring high speed switching, such as nanosecond PWM operations and power switching.
The BCV61C, 215 is composed of two gate-drain and two gate-source path types, which allows for three modes of operation: anode-source (AS), cathode-source (CS) and anode-drain (AD). In AS, the device can operate in either a controlled conduction or leakage mode. In CS, the device can operate in either a continuous-conduction or static mode. In AD, the device can operate in either a static or dynamic mode.
The BCV61C, 215 has an integrated high-speed clamp diode that enables it to reduce the losses associated with switching inductive loads. This device is capable of conducting currents of up to 20A with a reverse surge capability of up to 6A. The device also has an integrated gate drive circuit which increases the device’s switching speed and reliability. The BCV61C, 215 also has reverse bias protection, which reduces the chance of latch-up.
The BCV61C, 215 is an excellent choice for high speed switching applications. Its integrated clamp diode for inductive loads, along with its high current capacity and fast switching speed, make it one of the most sought-after transistors on the market today. Its reverse bias protection and integrated gate drive circuit further enhance its suitability for high speed switching applications, making the BCV61C, 215 one of the most reliable and efficient transistors available.
The specific data is subject to PDF, and the above content is for reference
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