BCV62AE6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BCV62AE6327HTSA1TR-ND |
Manufacturer Part#: |
BCV62AE6327HTSA1 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS 2PNP 30V 0.1A SOT143 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 10... |
DataSheet: | BCV62AE6327HTSA1 Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.05755 |
6000 +: | $ 0.05180 |
15000 +: | $ 0.04604 |
30000 +: | $ 0.04316 |
75000 +: | $ 0.03837 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 125 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | PG-SOT143-4 |
Base Part Number: | BCV62 |
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BCV62AE6327HTSA1 is a bipolar (BJT) transistor array that consists of 12 NPN transistors in one chip. The NE6327HTSA1 is a family of general purpose and high-speed PNP transistor array. Each NPN transistor has a current gain of 40 minimum and is capable of operation up to 50V.
Applications
The BCV62AE6327HTSA1 transistors are primarily used for general purpose applications. As it contains 12 transistors, it has superior indexing properties which makes it perfect for monolithic power control applications such as automotive lighting, home appliances and audio systems. Additionally, the NE6327HTSA1 is an excellent choice for driving motors and process control. The integrated structure also ensures superior thermal stability and excellent reliability.
Working Principle
The NE6327HTSA1 is an integrated NPN transistor array that features a dielectric distributed transistor architecture. This offers superior performance and improved electrical characteristics, as the device contains multiple transistors in a single package. The array comprises 12 NPN transistors, each with a current gain of 40 minimum. This makes it excellent for applications which require high output current ratings. Further, the NE6327HTSA1 is able to operate up to 50V, with a reverse-bias storage time of 10us.
The integrated architecture of the NE6327HTSA1 provides superior thermal stability, as it does not need any additional heatsinking. The package also ensures improved reliability and superior system reliability. The transistors can be threshold compensated for low-power operation. Additionally, the integrated architecture ensures maximum Signal to Noise Ratio (SNR).
Conclusion
The BCV62AE6327HTSA1 arrays offer superior performance and improved electrical characteristics compared to conventional discrete NPN transistor arrays. It is perfect for monolithic power control applications, and is able to operate up to 50V with a reverse-bias storage time of 10us. The integrated structure also ensures superior thermal stability, improved reliability and superior system reliability.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...