BCV62AE6327HTSA1 Allicdata Electronics

BCV62AE6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BCV62AE6327HTSA1TR-ND

Manufacturer Part#:

BCV62AE6327HTSA1

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS 2PNP 30V 0.1A SOT143
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 10...
DataSheet: BCV62AE6327HTSA1 datasheetBCV62AE6327HTSA1 Datasheet/PDF
Quantity: 12000
3000 +: $ 0.05755
6000 +: $ 0.05180
15000 +: $ 0.04604
30000 +: $ 0.04316
75000 +: $ 0.03837
Stock 12000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Power - Max: 300mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: PG-SOT143-4
Base Part Number: BCV62
Description

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BCV62AE6327HTSA1 is a bipolar (BJT) transistor array that consists of 12 NPN transistors in one chip. The NE6327HTSA1 is a family of general purpose and high-speed PNP transistor array. Each NPN transistor has a current gain of 40 minimum and is capable of operation up to 50V.

Applications

The BCV62AE6327HTSA1 transistors are primarily used for general purpose applications. As it contains 12 transistors, it has superior indexing properties which makes it perfect for monolithic power control applications such as automotive lighting, home appliances and audio systems. Additionally, the NE6327HTSA1 is an excellent choice for driving motors and process control. The integrated structure also ensures superior thermal stability and excellent reliability.

Working Principle

The NE6327HTSA1 is an integrated NPN transistor array that features a dielectric distributed transistor architecture. This offers superior performance and improved electrical characteristics, as the device contains multiple transistors in a single package. The array comprises 12 NPN transistors, each with a current gain of 40 minimum. This makes it excellent for applications which require high output current ratings. Further, the NE6327HTSA1 is able to operate up to 50V, with a reverse-bias storage time of 10us.

The integrated architecture of the NE6327HTSA1 provides superior thermal stability, as it does not need any additional heatsinking. The package also ensures improved reliability and superior system reliability. The transistors can be threshold compensated for low-power operation. Additionally, the integrated architecture ensures maximum Signal to Noise Ratio (SNR).

Conclusion

The BCV62AE6327HTSA1 arrays offer superior performance and improved electrical characteristics compared to conventional discrete NPN transistor arrays. It is perfect for monolithic power control applications, and is able to operate up to 50V with a reverse-bias storage time of 10us. The integrated structure also ensures superior thermal stability, improved reliability and superior system reliability.

The specific data is subject to PDF, and the above content is for reference

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