BCV62C,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-4901-2-ND |
Manufacturer Part#: |
BCV62C,215 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 30V 100MA DUAL SOT143B |
More Detail: | Transistor Current Mirror 2 PNP (Dual) Current Mir... |
DataSheet: | BCV62C,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14867 |
6000 +: | $ 0.13908 |
15000 +: | $ 0.12949 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) Current Mirror |
Applications: | Current Mirror |
Voltage - Rated: | 30V |
Current Rating: | 100mA |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BCV62 |
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BCV62C,215 Application Field and Working Principle
BCV62C,215 is a type of special purpose transistor developed by STMicroelectronics. It belongs to the family of special purpose transistors, which are manufactured to fulfil specific application requirements. This particular transistor is a PNP shaped transistor that is used in various low-power applications, such as switching, amplifying, and controlling applications.
The BCV62C,215 transistor comes in a TO-92 plastic package and has a collector current of 0.2A and a collector to emitter breakdown voltage of 65V. It has a high current gain (hFE) value of between 400 to 1000, ensuring a stable and reliable performance in low power applications. Moreover, its low collector to emitter saturation voltage (Vce(sat)) of 0.2V and low noise figure ensure consistent and reliable performance.
The transistor has a maximum operating temperature of up to 150°C and a maximum storage temperature of up to 150°C. Furthermore, due to its low capacitance and low power dissipation, it is highly suitable for use in devices which require low-power operation.
BCV62C,215 transistors can be used for applications where relatively low power levels (up to 0.2A) is required. Such applications may include low voltage devices such as audio amplifiers and preamplifiers, signal conditioning systems, switching transistors, radio transceivers, and power supplies.
In terms of its working principle, BCV62C,215 transistors are based on the bipolar junction transistor (BJT) structure. In this structure, current is allowed to flow through the transistor by applying a small voltage to a base electrode.
The bipolar junction transistor works on the principle of a voltage gain. When a small current is applied to the base electrode, a strong current flows through the collector-emitter junction. The current gain or beta (β) is determined by the ratio of the collector current to the base current.
In addition, the BCV62C,215 also has an internal current gain. It works by controlling the voltage that is applied to the collector. This voltage is set by the charge stored on the capacitance between the collector and the base. This control is referred to as the \'Miller effect\'.
In summary, BCV62C,215 belongs to the family of special purpose transistors. It has a high current gain (hFE) value, a low collector to emitter saturation voltage (Vce(sat)) of 0.2V, and a low noise figure, making it highly suitable for use in low power applications such as amplifying, switching, and controlling applications. It works on the principle of a bipolar junction transistor, which is based on the voltage gain principle, and the Miller effect.
The specific data is subject to PDF, and the above content is for reference
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