BCV62,235 Allicdata Electronics

BCV62,235 Discrete Semiconductor Products

Allicdata Part #:

1727-1191-2-ND

Manufacturer Part#:

BCV62,235

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 30V 100MA DUAL SOT143B
More Detail: Transistor Current Mirror 2 PNP (Dual) Current Mir...
DataSheet: BCV62,235 datasheetBCV62,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.06858
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP (Dual) Current Mirror
Applications: Current Mirror
Voltage - Rated: 30V
Current Rating: 100mA
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BCV62
Description

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BCV62,235 Application Field and Working Principle

BCV62,235 is a type of special purpose transistor which is best suited for switching and linear applications. This device is typically used as an amplifier, oscillator, regulator, and/or as a driver for various circuits. The BCV62,235 is a multi-gate, low-power and low-noise transistor which allows for improved performance and flexibility in system designs.

Application Fields

BCV62,235 transistor is capable of being used in a variety of high-speed switching, linear, and analog applications as well as in low capacitance displays. This versatility makes the BCV62,235 a popular choice for many applications, including RF, switching modes, LED drivers, operational amplifiers, lighting and logic control, among others.

Working Principle

The BCV62,235 multi-gate transistor is built with a planar process which includes the use of multiple thin-film layers. It is composed of nine thin gate oxide layers, gate contact layers, gate field oxide layers and source/drain layers. The gate oxide layers and gate contact layers act as a medium for the electric charge to travel in and out of the device. The gate field oxide layer provides insulation between the various layers. The source and drain layers are responsible for providing contact with the circuit and carrying the current through the device.

When operating correctly, the BCV62,235 switches the current on and off by controlling the voltage fields within its layers. As the voltage field is increased, the current travelling through the device is decreased. Conversely, when the voltage field is decreased, the current travelling through the device is increased. This allows the device to act as either a switch or an amplifier, depending on the kind of application it is used for.

The BCV62,235 also provides better electrical stability when compared to other multi-gate transistors due to its multiple thin-film layers. The thin-film layers create a tighter seal between the various layers within the device, thus improving the overall stability and reliability of the device. Moreover, the thin-film layers allow for faster operation and increased accuracy in applications requiring precise timing.

Conclusion

The BCV62,235 is a multi-gate transistor which is ideal for a wide range of RF, switching mode, linear, and analog applications. It offers improved performance, flexibility and reliability, making it a popular choice for many electronic designs. The BCV62,235 is capable of operating at high speeds and provides increased accuracy when used in precision timing applications. This makes it an attractive choice for a variety of designs and applications.

The specific data is subject to PDF, and the above content is for reference

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