Allicdata Part #: | BCX5416TATR-ND |
Manufacturer Part#: |
BCX5416TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 45V 1A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 1A 150MHz 1W Surf... |
DataSheet: | BCX5416TA Datasheet/PDF |
Quantity: | 8000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
Base Part Number: | BCX54 |
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The BCX5416TA is a PNP transistor, classified as a single bipolar junction transistor (BJT). The BCX5416TA has a collector-emitter voltage of 40V, and a collector current of -2A. It is suitable for high-frequency applications, such as radio and TV transmitters, loudspeaker amplifiers, and power converters.
The BCX5416TA\'s operation is based on the basic principles of transistor physics. At its most fundamental level, the transistor consists of a base region, an emitter region, and a collector region. The base region is the control point of the transistor, controlling the flow of current from the emitter region to the collector region. This current flows when the base-emitter region is forward biased; that is, when the voltage across the terminals is greater than the emitter-base junction barrier voltage. This forward biased base-emitter region achieves a base current gain, thus a collector current amplifying the signal at the base.
The BCX5416TA is suitable for high frequency applications because it offers features such as high break-down voltage and a low base resistance. This makes it suitable for driving small signal loads, such as those found in small signal switching and amplifying applications. Due to its large collector current, the BCX5416TA can be used in power switching applications where large currents are required. The BCX5416TA also has a low collector-emitter saturation voltage, allowing for efficient power switching as well.
In addition to its high frequency capability, the BCX5416TA also offers low distortion characteristics. This is due to its low collector-emitter resistance, allowing for low harmonic distortion when switching or amplifying signals. This low distortion makes the BCX5416TA suitable for signal processing applications, such as those found in radio and TV transmitters. In addition, the BCX5416TA has a high frequency sustaining voltage, meaning that it can be used in high frequency applications without the need for high base driver currents.
The BCX5416TA also has an upper frequency limit of 500MHz, making it suitable for RF/microwave applications. The BCX5416TA is also temperature resistant, meaning that it can withstand operating temperatures up to -40C and +115C. This temperature resistance makes it suitable for industrial and automotive applications.
In conclusion, the BCX5416TA is a PNP transistor, classified as a single bipolar junction transistor. It has a collector-emitter voltage of 40V, suitable for high-frequency applications, a low base resistance, and low harmonic distortion. Its upper frequency limit is 500MHz, making it suitable for RF/microwave applications, and its temperature resistance makes it suitable for industrial and automotive applications. The versatility and performance of the BCX5416TA make it an excellent choice for many designs.
The specific data is subject to PDF, and the above content is for reference
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