Allicdata Part #: | BCX56-10R1OS-ND |
Manufacturer Part#: |
BCX56-10R1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 1A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.56W S... |
DataSheet: | BCX56-10R1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 1.56W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BCX56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A BCX56-10R1, also known as a NPN epitaxial silicon transistor, is a bipolar junction transistor (BJT) used in a variety of applications. It is a three-terminal device that is made up of an emitter, a base, and a collector. The BCX56-10R1 transistor comes in a SOT-363 plastic package, and has a collector-emitter voltage rating of -50 V. This makes it ideal for low voltage and low power electronics applications.
The BCX56-10R1 can function as a switch or an amplifier depending on how it is used. As a switch, it can be used to open or close circuits in order to provide switching capability in an electronic circuit. As an amplifier, it can provide gain and signal control. The BCX56-10R1 also has high switching speed, low saturation voltage, and low collector-emitter saturation. This makes it ideal for use in low power high frequency switching applications.
The BCX56-10R1 works on the principle of the bipolar junction transistor. This transistor is made up of three regions: the base, collector, and emitter. When a small current is applied to the base, it causes charge carriers to be injected into the base region, creating a current gain for the device. This current gain is called the “beta” of the device. The greater the beta, the greater the gain. The oxide-isolated surface of the emitter region increases the area of contact between the emitter and the base. This increases the current gain of the device.
In order to make effective use of the BCX56-10R1 transistor, it is important to consider its physical and electrical characteristics. The transistor is made up of a silicon wafer and has a dielectric isolation to provide increased current gain. It has a collector-emitter breakdown voltage rating of -50V, which means it can safely handle large amounts of voltage. The device also has low saturation voltage and high switching speed, making it an ideal choice for a wide range of low-power applications. Additionally, the BCX56-10R1 has a low collector-emitter saturation, which makes it an ideal choice for digital and analog applications.
The BCX56-10R1 transistor is a popular choice for applications such as digital circuits, analog circuits, power switching, and amplifiers. It is most commonly used for low voltage and low power electronics applications, as it has a low saturation voltage and high switching speed. Additionally, it is used in circuits that require an amplifier, as it has a high current gain. The device is also used in circuits that require switching, as it has a low collector-emitter saturation. Overall, the BCX56-10R1 is a great choice for low power high frequency switching and low power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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