BCX56E6327HTSA1 Allicdata Electronics

BCX56E6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BCX56E6327HTSA1TR-ND

Manufacturer Part#:

BCX56E6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 80V 1A SOT-89
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 100MHz 2W Surf...
DataSheet: BCX56E6327HTSA1 datasheetBCX56E6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
Base Part Number: BCX56
Description

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Semiconductor transistors are one of the major components in electronics that are used for signal amplification and signal switching. They have a wide range of application, including audio amplifiers, switching circuits and power supplies. One of the most common type of transistors is the Bipolar Junction Transistor (BJT), which is mainly used in digital and analog circuit design. The BCX56E6327HTSA1 is an NPN Bipolar Junction Transistor, a type of single transistor among BJTs.

Application Field

BCX56E6327HTSA1 is a Bipolar NPN transistor (BJT) with high current and power ratings. Due to its high current and power, it is widely used in power supplies and switching applications. Furthermore, it can be used in applications that require higher voltage levels, such as speed control of motors, heaters and more.

Working Principle

The transistor\'s working principle is based on the concept of semiconductor actions, where electrons and holes form virtual junctions, or "bipolar" junctions, within the device. When the transistor is operating, an electric current is applied to the base. This current influences the current flow between the collector and the emitter, thus creating an amplification effect.

The BCX56E6327HTSA1 is an NPN Bipolar Junction Transistor and as such is capable of higher voltage levels than PNP transistors. It uses N-type material for the emitter and base, and P-type material for the collector. This structure allows for two different circuits, the common-base circuit and the common-emitter circuit. In the common-base circuit, charge carriers diffuse from the emitter to the base and from the base to the collector. In the common-emitter circuit, the base region acts as a charge injection barrier, while the collector region acts as a collector region.

Moreover, it can be used in advanced circuit designs such as low noise amplifiers and wideband amplifiers, which require good linearity, low noise and high frequency response. It is also suitable for switching circuits. Due to its high power capabilities and fast switching speed, it is widely used in power supplies, audio amplifiers, and other high-power applications.

The BCX56E6327HTSA1 is a reliable and cost-effective transistor ideal for multiple applications. With its high performance, it is suitable for use by engineers and technicians in a variety of fields. It is an excellent choice for high-power applications, and its low-noise operation enables it to be used for low-noise amplifier designs.

The specific data is subject to PDF, and the above content is for reference

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