BCX56-16,135 Allicdata Electronics
Allicdata Part #:

1727-6389-2-ND

Manufacturer Part#:

BCX56-16,135

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 80V 1A SOT89
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 180MHz 1.25W S...
DataSheet: BCX56-16,135 datasheetBCX56-16,135 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07001
8000 +: $ 0.06612
12000 +: $ 0.06029
28000 +: $ 0.05640
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BCX56
Description

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The BCX56-16,135 is a Bipolar Junction Transistor (BJT), and is classified as a single transistor. It is a wideband NPN silicon transistor which operates at very low voltages and large currents. This type of transistor is used in a variety of applications, from RF amplifiers and small-signal switching to high-performance current-mode control applications. The operating voltage typically ranges from -15V to +15V and the operating current is usually in the range of 1A. This makes the transistor suitable for applications that require high power and high efficiency.

The BCX56-16,135 is a bipolar NPN transistor which has two layers of semiconducting material supply the switch function. The N-type layer or emitter is connected to the collector and the P-type layer or base is connected to the emitter. The base is the control terminal of the transistor, and it can be controlled by applying a low electrical current to it. When this current is applied, the transistor will amplify the current and switch either on or off. The device also has a reverse-biased diode between the base and collector, which provides protection for the device when it is off.

The working principle of the BCX56-16,135 is based on the effect of transistor action. When current passes through the device from the emitter to the collector, it generates a small amount of collector current, which is then amplified and the voltage between the collector and the emitter is changed. This amplification effect is the result of changes in the transistors Vbe parameter, which is known as the transistor action. This Vbe is affected by changes in the collector current and is an essential part of the transistor action.

The applications of the BCX56-16,135 are diverse, as this type of transistor is used in many different fields. It can be used in electronics, telecommunications, industrial power supplies, automotive controls, medical devices and computer systems. It is also used in high-efficiency RF amplifiers, small-signal switching, current-mode control and power switching applications. The device is also used in applications such as audio amplifiers, voltage regulators, servo motor controllers and many other power electronics applications.

The BCX56-16,135 is a versatile device which can be used in many different types of applications. Its wide voltage range makes it suitable for high-efficiency power circuits, while its low current requirements make it a suitable choice for high-performance power control applications. Its combination of features makes it a perfect choice for many types of electronic, mechanical and commercial applications.

The specific data is subject to PDF, and the above content is for reference

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