Allicdata Part #: | 497-14760-5-ND |
Manufacturer Part#: |
BD140-16 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS PNP 80V 1.5A SOT-32 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1.5A 1.25W Throu... |
DataSheet: | BD140-16 Datasheet/PDF |
Quantity: | 1255 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 2V, 150MA |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | SOT-32 |
Base Part Number: | BD140 |
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The BD140-16 is a PNP, silicon epitaxial-base, complementary power transistor designed for use in general purpose, audio, switching andamplifier applications. It belongs to the “Single Bipolar (BJT) Transistors” family and its applications include power switching, linear and switching amplifiers, audio amplifiers, voltage/current regulators, relay drivers and motor control.
The BD140-16 consists of a silicon-epitaxially diffused layer NPN and PNP transistor which have complementary characteristics. It has a collector-emitter voltage of 40 volts, a collector current of 1.5 amps minimum and a hFE of 80 minimum. It also has a maximum power dissipation of 1.32 watts at 25°C with a rated collector current at 2A. It has a maximum junction temperature of 175°C with an operating frequency of up to 2MHZ.
The BD140-16 transistor works on the principle that current amplification is obtained by the movement of charge carriers between the emitter and collector regions of the junctions. The transistor has an emitter, base and collector junctions which are formed by the diffusion of impurity atoms into a semiconductor material. The impurity atoms act as the charge carriers and the diffusion creates the n-type (negatively charged) and p-type (positively charged) regions. The base region is made narrow so that the movement of charge carriers from base to collector is under control. When the base voltage is increased the base-emitter junction becomes more forward biased. This in turn causes more charge carriers to flow from the emitter to collector and thus increase current amplification.
The BD140-16 transistor is built using surface-mount technology which enhances the reliability and helps reduce the size of the device. It is housed in the industry standard TO-126 package. The device has a high common emitter transition frequency and high breakdown voltage, low saturation voltage and low emitter-base voltage. The BD140-16 transistor is ideal for applications where high speed switching and low transition losses are required. It is also suitable for audio applications as it has low distortion and low thermal resistance.
In summary, the BD140-16 is a complementary power transistor used in general purpose, audio, switching and amplifier applications. It has a collector-emitter voltage of 40 volts, collector current of 1.5 amps minimum and a hFE of 80 minimum. It is made using surface mount technology and is housed in the TO-126 package. It has low thermal resistance, low saturation voltage, low distortion and high transition frequency. With these features, it is ideal for applications requiring high speed switching and low transition losses.
The specific data is subject to PDF, and the above content is for reference
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