Allicdata Part #: | BD1406S-ND |
Manufacturer Part#: |
BD1406S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 1.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1.5A 1.25W Throu... |
DataSheet: | BD1406S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD140 |
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BD1406S Application Field and Working Principle
The BD1406S is a 4-terminal NPN bipolar junction transistor (BJT) that is classed as a single type. This type of BJT can be used in a wide range of applications, including various types of amplifiers and switch circuits.
The BD1406S is composed of a single layer of semiconductor material, which is usually composed of silicon or germanium doped with impurities to form an p–n junction, allowing the transistor to act as a controlled current switch through an external voltage source. It consists of a base, collector and emitter. The base is used to control the current flowing between the collector and the emitter when a small voltage is applied to the base. Because of the small size of the transistor, it can be used in low power circuits where other types of components such as resistors or vacuum tubes may not be practical.
The BD1406S can be used in many applications, such as: for amplifying low frequency or audio signals in amplifiers and pre-amps; for switch and buffer circuits; for biasing in power amplifiers and linearizing circuits; in radio receivers and transmitters; in frequency dividers and multipliers; and for sample and hold circuits.
In a common emitter configuration, with the base connected to an input voltage source and the emitter connected directly to ground, current is drawn through the emitter-base junction and appears at the collector. The collector current is equal to the emitter-base current multiplied by the gain of the device, which is known as its current gain (b) and is specified as the ratio of the collector current to the emitter-base current. The input voltage at the base determines the emitter-base current, and the input impedance of the transistor (if used as an amplifier) can be controlled by selectively adding a series resistor at the base.
In a common base configuration, the input voltage is applied to the collector and the output is taken from the emitter. Here, the gain is less than in a common emitter configuration, but the input impedance is increased, showing a high input impedance. As well, the base current is very small compared to the collector current, resulting in an improved linearity and response.
The working principle of the BD1406S is based on the fact that the current passing through the device is proportional to the voltage applied between its base and emitter. As the voltage across the base-emitter junction increases, the current flow increases. This increase in current flow results in a decrease in the resistance of the BJT, thus allowing more current to flow through it. This increased current is then passed to the collector, resulting in a gain in the current across the device.
The BD1406S is a widely used discrete device and can be used in a variety of applications due to its small size and easy connection. Its wide range of capabilities makes it versatile, and its simple operation and reliable performance make it an excellent choice for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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