Allicdata Part #: | BD14016STU-ND |
Manufacturer Part#: |
BD14016STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 1.5A TO126 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1.5A 1.25W Throu... |
DataSheet: | BD14016STU Datasheet/PDF |
Quantity: | 609 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD140 |
Description
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The BD14016STU is a single, two-level field-effect transistor. It is a type of bipolar junction transistor (BJT) designed to operate at moderately high current densities and voltage ratings. The device has a small cell topology with four pins: drain, gate, source, and base. The rated maximum voltage is 15V, and the rated current density is 2mA/mm2.When the base voltage is applied to the device, current flows through it, creating a magnetic field. The magnetic field causes the electrons in the gates of the device to align themselves according to the field strength, creating a depletion zone or depletion layer in the semiconductor. This layer acts as a capacitor, creating a potential difference between the drain and source that changes with the application of a voltage.The depletion zone is asymmetric, creating a second depletion layer beneath the source terminal. This second layer is typically referred to as the source-side depletion layer. As the source voltage increases, the source-side depletion layer increases and the gate voltage decreases. This results in an increase in current density and voltage ratings of the device.A single BD14016STU can be used in a variety of applications, such as power switching and regulation, high voltage switching, lighting, logic circuits, and low-noise amplifiers. Its high voltage rating makes it suitable for applications where high voltages and current densities are present, such as in power supplies and motor control. Its low gate voltage leakage current also makes it useful for low-noise amplifiers.In addition to its high voltage and current ratings, the BD14016STU also has a low power consumption. This makes it suitable for applications where low power consumption is required, such as portable electronic devices. The BD14016STU features a maximum operating temperature of 125°C, which makes it suitable for high temperature applications.The BD14016STU is a versatile device and has a wide range of applications. It is a reliable, efficient transistor that is suitable for a variety of applications. From power switching and regulation to high voltage switching and low-noise amplifiers, the BD14016STU is a reliable and highly versatile transistor.
The specific data is subject to PDF, and the above content is for reference
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