Allicdata Part #: | BD14010STU-ND |
Manufacturer Part#: |
BD14010STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 1.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1.5A 1.25W Throu... |
DataSheet: | BD14010STU Datasheet/PDF |
Quantity: | 1091 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
Base Part Number: | BD140 |
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BD14010STU is a type of transistor which belongs to Single Bipolar Junction Transistor (BJT) category. It is designed for indoor use only and it has some features that makes it uniquely suitable for certain types of applications. The device is a NPN transistor and it has three terminals - the emitter, collector, and base - which are used to control the flow of current between the two conducting elements, the collector and the emitter.
The primary benefit of using the BD14010STU transistor is its high current gain, which is typically in the range from 100 to 500. This is higher than most competing BJTs, and allows designers the ability to drive more current through the device than many similar BJTs. The device also has a good output impedance, which helps to minimize signal loss and improve signal integrity.
The maximum operating temperature of the BD14010STU is 65 °C, which is low enough to make it suitable for longer operating conditions. The device also has a very good power dissipation capacity, which makes it well-suited to applications where high levels of current are needed to actuate components or generate more complex signals. With a maximum collector-emitter voltage (VCEO) of 65V, it is also ideal for applications where higher voltage is needed. Finally, the device features a low reverse current leakage and a good temperature stability which make it highly reliable.
As for the applications, the BD14010STU is a great choice for wired telecommunication systems, and can be used as an amplifier in such systems. It can be used in power inverters and power supplies, as well as in SSR drivers. It can also be used in audio and video equipment, as well as in radio transmitters. Moreover, it is useful in applications requiring low voltage and/or high frequency switching.
In terms of its working principle, the BD14010STU transistor works by altering the current flow between the collector and the emitter. When the base and the collector are connected with a voltage applied, the resulting current flow increases or decreases depending on the bias applied to the base. This is controlled by the base-emitter voltage, and the resulting current flow between the two terminals is known as the collector current (Ic). Since the device can control both higher and lower currents, it is versatile and can be used in many different applications.
To conclude, the BD14010STU is a great choice for a wide variety of applications, as it offers good current gain, low power dissipation, and a wide range of voltage and temperature requirements. It is a great choice for longer working conditions and applications where high current is required, and its good output impedance helps to maintain signal integrity.
The specific data is subject to PDF, and the above content is for reference
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