BD14010S Allicdata Electronics
Allicdata Part #:

BD14010S-ND

Manufacturer Part#:

BD14010S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 1.5A TO-126
More Detail: Bipolar (BJT) Transistor PNP 80V 1.5A 1.25W Throu...
DataSheet: BD14010S datasheetBD14010S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD140
Description

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Transistors - Bipolar (BJT) - Single

The BD14010S is a multi-purpose power transistor that is used in a variety of electronic circuits. This versatile component is primarily used for moderate power amplifiers, inverters, power switches, and power transistors. It is one of the most popular parts in the BD14010S family of transistors and is designed to handle many applications with ease. Its features make it ideal for a wide range of applications that require medium power switching and amplification.

The BD14010S has two different pin configurations, depending on the usage of the transistor. The two pins on the BD14010S are drawn differently and have different pin assignments depending on the transistor\'s purpose. For fast switching applications, the drain and source pins are used to control the current. The gate and base pins are used to control the voltage and current, respectively. As the name implies, the BD14010S is designed for applications that require high-speed switching and power amplifiers.

The BD14010S is a NPN (negative-positive-negative) power bipolar transistor with a peak collector-base breakdown voltage of 30V and maximum collector-emitter voltage of 5V. In addition, the BD14010S has a maximum collector current of 80mA and a maximum collector-emitter voltage of 1V. Due to its distinctive features, this transistor is used for fast switching and power amplification applications.

The BD14010S is a high-speed, high-power switching power transistor that is constructed with a silicon epitaxial structure. The construction of this transistor helps to minimize the amount of heat produced during switching, and allows the circuit to operate at high speeds. The BD14010S has a fast switching of 1200V/ms and a fast internal charging time of 40ns. These features make it ideal for high-frequency applications requiring high-speed gate frequencies.

The BD14010S has a low-noise, high performance power transistor. The output of this transistor is very low, allowing it to be used in noise sensitive applications. The low-noise aspect of this transistor also allows it to be used in low-power audio-video applications. The BD14010S has a range of application fields, such as telephone and audio amplifiers, low-voltage switching applications, and DC-DC converters.

The working principle of the BD14010S is based on an NPN transistor configuration. This configuration consists of three components, namely the collector, the base, and the emitter. When the base voltage is increased, the current flow increases and drives the load. The collector and emitter are then connected to the load, allowing the load to be switched on or off depending on the base voltage. This process is used to control the voltage and current in the circuit.

In conclusion, the BD14010S is a versatile component that has many features and is designed for a variety of uses. Its features, including high-speed switching, low-noise performance, and low heat production, make it an ideal choice for many applications. Its different pin configurations, allowing it to be used as a power switch, inverter, and amplifier, make it a valuable component in many electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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