BD140 Discrete Semiconductor Products |
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Allicdata Part #: | 497-6657-5-ND |
Manufacturer Part#: |
BD140 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS PNP 80V 1.5A SOT-32 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1.5A 1.25W Throu... |
DataSheet: | BD140 Datasheet/PDF |
Quantity: | 1258 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | SOT-32-3 |
Base Part Number: | BD140 |
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Transistors - Bipolar (BJT) - Single: BD140 Application Field and Working Principle
The BD140 is a high power (up to 1.5A) PNP bipolar junction transistor encased in a TO-126 package. It is widely used in switching and amplifying applications, and can be used in both switching and linear related circuits. Its main characteristics are good gain linearity, wide frequency range, low collector-emitter saturation voltage, and a low input and output impedance.
Application Field: The BD140 is designed for use in consumer electronic devices such as radios, televisions, and other amplifying equipment, and finds particular application where high power audio output is required. It is also suitable for use in automotive applications such as relays, and in power transistor applications such as power amplifiers. In addition, it is also used in power switching circuits, signal switching circuits, and motor control circuits.
Working Principle: To understand how a BD140 works, it is important to first understand the principle behind a bipolar junction transistor (BJT). A BJT consists of two P-N junctions, one between an emitter and base junction and one between the base and collector. In a PNP transistor, an electron current is allowed to flow from the base to the collector, when the base-emitter junction is forward biased, and from the collector to the base when the collector-base junction is reverse biased. This current flow is controlled by the forward and reverse bias voltage, which can be controlled in turn by the circuit.
The BD140 is a PNP transistor with a collector current of up to 1.5A and a breakdown voltage of -40V. It is capable of delivering up to 3 Watts of power. The base region is connected to the emitter, and is protected against any unwanted reverse currents due to its high voltage rating. It has a low collector-emitter saturation voltage and a low base-emitter saturation voltage, which allows it to be used in amplifying and switching applications with good linearity over the input signal range.
The BD140 is a high power, general purpose transistor and is ideal for use in a variety of electronic circuits. Its mobility, high voltage rating, and good linearity make it suitable for use in power switching and amplifying circuits. It has a wide frequency range and low input and output impedance, allowing it to be used in high power equipment.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BD14010S | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 1.5A TO-126... |
BD1406S | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 1.5A TO-126... |
BD1406STU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 1.5A TO-126... |
BD14016S | ON Semicondu... | -- | 563 | TRANS PNP 80V 1.5A TO-126... |
BD140-16 | STMicroelect... | -- | 1255 | TRANS PNP 80V 1.5A SOT-32... |
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