BD676AG Allicdata Electronics
Allicdata Part #:

BD676AGOS-ND

Manufacturer Part#:

BD676AG

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 45V 4A TO225
More Detail: Bipolar (BJT) Transistor PNP - Darlington 45V 4A ...
DataSheet: BD676AG datasheetBD676AG Datasheet/PDF
Quantity: 921
1 +: $ 0.39690
10 +: $ 0.34902
100 +: $ 0.26744
500 +: $ 0.21142
1000 +: $ 0.16913
Stock 921Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD676
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BD676AG is a silicon-based, single NPN transistor, which is one type of bipolar junction transistor (BJT) that functions by controlling current flow between two terminals, called the “base” and “collector”. The BD676AG also has a third terminal known as the “emitter”. This kind of transistor is commonly used in electronic device applications where digital switching, voltage regulation and amplification are needed.

In terms of its working principle, when the base-emitter junction is forward biased, current flows from the emitter to the base, the emitter-to-base “on” resistance becomes very low and saturation is reached. This causes a corresponding increase in collector current, allowing current to flow between the collector and emitter. When the base-emitter junction is reversed biased, the collector-emitter junction is reverse biased. In reverse bias mode, the collector current is virtually zero, disabling current flow between the collector and emitter.

The BD676AG has several beneficial features. It is a robust, cost-effective product that is reliable in many applications. In terms of its application fields, the BD676AG transistor can be used for digital switching, voltage regulation and amplification in audio, video, automotive and telecommunications devices. It is also frequently used within amplifiers and power supply circuits, digital logic circuits, and motor and DC/DC converter circuits.

The transistor is designed for use in medium power switch mode applications that require low thermal resistance and low gate charge. Its rugged and compact construction makes it ideal for use in power control applications such as power supplies, converters and motor control circuits. With a maximum operating temperature of 150 degrees Celsius, it is suitable for use in a wide range of applications, including high power applications.

In terms of its electrical characteristics, the BD676AG has a BVCEO breakdown voltage between 30 - 100 volts and an emitter-collector saturation voltage of 0.2 - 0.7 volts. It has a maximum current gain of 300 and a power output of 0.3 watts. The BD676AG also has a maximum operating frequency of 10 MHz and a collector saturation current capacity of 30 mA.

The BD676AG is a robust, economical, and reliable single NPN transistor that is capable of serving a variety of applications. It offers high performance and low thermal resistance, making it suitable for use in a wide range of electronic devices, from motor control circuits to audio and video devices. With its wide range of applications and electrical characteristics, the BD676AG provides users with a cost-effective, reliable option when it comes to transistors for their electronic device projects.

The specific data is subject to PDF, and the above content is for reference

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