BD677AS Allicdata Electronics
Allicdata Part #:

BD677ASFS-ND

Manufacturer Part#:

BD677AS

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 60V 4A TO-126
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 4A ...
DataSheet: BD677AS datasheetBD677AS Datasheet/PDF
Quantity: 2000
1 +: $ 0.40320
10 +: $ 0.35532
100 +: $ 0.27248
500 +: $ 0.21538
1000 +: $ 0.17231
Stock 2000Can Ship Immediately
$ 0.44
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD677
Description

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The BD677AS is an NPN plastic-encapsulated transistor used in a variety of applications. The BD677AS has a collector-emitter voltage of up to 500V, a transition frequency of up to 100MHz, and a current gain of up to 100. It\'s most commonly used as a high-frequency switch, amplifier, power regulator, or voltage regulator. This makes it an extremely versatile component in electronic systems.

A bipolar junction transistor (BJT) is a type of transistor commonly used in electronic systems. It consists of three layers: the base, collector, and emitter. The two p-type semiconductor layers of the transistor form a single layer between them. This layer is known as the base layer. The n-type semiconductors form the collector and emitter layers.

When an electrical current enters the base layer of the transistor, it causes electrons in the base layer to rush towards the collector. The collector captures some of the electrons, creating a current between the collector and the emitter. This current is amplified, and the transistor can be used as an amplifier or a switch, depending on the load on it.

The BD677AS is a single BJT (Bipolar Junction Transistor). As such, it can be used in a variety of applications including amplifiers, switches, and voltage regulators. It has a maximum collector-emitter voltage of 500V, a transition frequency of up to 100MHz, and a current gain of up to 100.

The BD677AS can be used as an amplifier, switch, power regulator, or voltage regulator. When used as an amplifier, the BD677AS is able to amplify incoming signals with a high level of precision. This makes it ideal for applications such as radio and television circuitry.

It can also be used as a switch. In this application, the BD677AS is able to control the flow of current in the circuit by opening and closing the transistor. This makes it ideal for applications such as controlling motors, relays, and lights.

When used as a power regulator, the BD677AS is able to regulate the power in the circuit and keep it at a steady level. This makes it ideal for applications such as power adapters, battery chargers, and other power supply circuits.

Finally, the BD677AS can be used as a voltage regulator. In this application, the BD677AS is able to control the voltage in the circuit and keep it at a steady level. This makes it ideal for applications such as voltage regulators and AC/DC converters.

The BD677AS is an extremely versatile component that can be used in a variety of applications. It has a maximum collector-emitter voltage of 500V, a transition frequency of up to 100MHz, and a current gain of up to 100. This makes it an ideal choice for applications such as amplifiers, switches, power regulators, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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